| Allicdata Part #: | APTGT100TL60T3G-ND |
| Manufacturer Part#: |
APTGT100TL60T3G |
| Price: | $ 38.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT MODULE 3LEVEL INVERTER SP3 |
| More Detail: | IGBT Module Trench Field Stop Three Level Inverter... |
| DataSheet: | APTGT100TL60T3G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 34.85450 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Three Level Inverter |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 150A |
| Power - Max: | 340W |
| Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 100A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 6.1nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP3 |
| Supplier Device Package: | SP3 |
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The APTGT100TL60T3G is a module of insulated gate bipolar transistors (IGBTs) used in various applications. IGBTs are semiconductor devices that typically have higher breakdown voltages and enable low-power operation when compared to traditional bipolar junction transistors (BJTs). The APTGT100TL60T3G is a high voltage module that is three-phase bridge circuit package with 1/2 lamination, optimized for low conduction losses and low switching losses.
The major application fields where the APTGT100TL60T3G finds its use are in motor control, welding, solar inverters, and high-power UPS systems. Motor control is a task where the module helps in providing a stable and reliable way to control motor speed and torque. The module is also suitable for use in systems with high power demands, where it can act as a switch controlling large power consumption.
As for its working principle, the module has gate-controlled bipolar transistors, or IGBTs, that are composed of an isolation layer between an N-channel MOSFET and a PNP BJT. During operation, the gate driven transistor switches current rapidly between two voltage levels, that is the high voltage level, or on-state which is the normally conducting channel, and the low voltage level or off-state which is the normally blocking channel. This switching process creates a bridge circuit which then enables the interconnection between two opposite terminals and allows the current to flow in a certain direction.
In addition, the module also includes diodes which are placed between the phase legs and collector, and is optimized for low conduction losses and low switching losses. During operation, the diodes are employed to quickly redirect the current when the switches are reversed in its direction of conduction.
Overall, the APTGT100TL60T3G is an ideal module for applications that require high voltage and low power operation, such as in motor control, welding, solar inverters, and UPS systems. With IGBTs that are optimized for low conduction and switching losses, as well as integrated diodes for better current redirection, the module is an effective solution for applications with large power demands.
The specific data is subject to PDF, and the above content is for reference
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APTGT100TL60T3G Datasheet/PDF