Allicdata Part #: | APTGT200A120G-ND |
Manufacturer Part#: |
APTGT200A120G |
Price: | $ 84.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MODULE IGBT 1200V 200A SP6 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 28... |
DataSheet: | APTGT200A120G Datasheet/PDF |
Quantity: | 100 |
1 +: | $ 76.82850 |
10 +: | $ 71.80390 |
25 +: | $ 69.29370 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 280A |
Power - Max: | 890W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 200A |
Current - Collector Cutoff (Max): | 350µA |
Input Capacitance (Cies) @ Vce: | 14nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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APTGT200A120G is an IGBT module widely-utilized in many industries, from commercial to industrial. It is a 3-level IGBT module consisting of 3 IGBTs, each with an included free-wheeling diode, connected in series.
The module is ideal for applications requiring a large forward current flow. When incorporated into the circuit, the module can operate over an impressive wide range of temperatures. It also offers advanced fast compatible switching due to the included anti-parallel diode.
The APTGT200A120G has a number of components to its design which must provide protection from possible damage and/or dangerous conditions. An under voltage protection (UVP) feature is included and serves to ensure the voltage across the module is not too low. The maximum gate emitter and gate collector ratings must also be respected to ensure the module is not damaged while in operation.
One of the main advantages of the module is its excellent high-power application field. This results in lean and efficient operation in applications such as welding machines, motor control, power conversion and rectification, AC and DC drive systems, battery chargers, and power supplies. The module is also excellent in Appliance Drive Circuits (ADC) and Power switches for rectification or frequency control.
At the core of the device is the Insulated Gate Bipolar Transistor (IGBT). This is a power semiconductor device that can be configured to create either an open-circuit or a high-power switching mode, depending on its configuration. The IGBT has very low loss and high efficiency. It works by controlling the voltage and current applied to the gate in order to allow or reject the current flow to the output device - the drain or collector.
The APTGT200A120G module also has a fast switching feature that enables a quicker response time, improving the overall performance of the device. This is enabled by the fast switching IGBT junction that allows faster switching as compared to bipolar transistors. The module also provides a more robust design due to its own high-temperature circuit protection.
The overall performance of the APTGT200A120G module is excellent due to its wide input voltage range and its protection from catastrophic failure. It is a reliable, cost-effective and efficient device, offering superior value and reliability in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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