Allicdata Part #: | APTGL40X120T3G-ND |
Manufacturer Part#: |
APTGL40X120T3G |
Price: | $ 39.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOD IGBT 1200V 65A SP3 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | APTGL40X120T3G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 36.00870 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 65A |
Power - Max: | 220W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 35A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 1.95nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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The APTGL40X120T3G power modules are Insulated-Gate Bipolar Transistor (IGBT) Modules, which are widely used due to their high levels of performance and reliability. The device belongs to the APTGL40X120T3G power module series, which is designed with advanced technology to optimize electrical output, as well as reduce power losses within the device. In applications such as motor control, inverters, and rectifiers, these devices are ideal for applications with sensitive electric loads.
Application Field
The APTGL40X120T3G power modules are primarily optimized for equipment operation in harsh industrial environments. Their electric power capabilities and durability in such environments make these devices suitable for any applications needing high reliability and performance. It is also widely used in various power electronics systems, such as solar energy conversion, frequency converters, wind turbines, robotics, data centers, uninterruptible power supply (UPS) systems, and power transmission.
Working Principles
APTGL40X120T3G power modules are equipped with advanced IGBTs and cooling technologies, which are specifically designed to handle high bound currents and temperatures, ensuring reliability and efficiency. IGBTs are based on a MOSFET semiconductor structures, where an insulated gate is used as the main switching element to control current, allowing for efficient switching and higher power density. The insulated gate of the IGBT is configured using a metal-oxide-semiconductor field-effect transistor (MOSFET) and consists of two sections: a body region containing the doped p-type and n-type semiconductor regions, and a control gate region containing the metal oxide.
When a voltage across the gate and the body is applied, the induced electric field in the gate region modifies the MOSFET’s conductivity, allowing for superior switching and higher power densities. Due to its robust design, the APTGL40X120T3G also features improved input and switching frequencies, as well as excellent thermal noise immunity when compared to conventional semiconductor power modules.
Advantages
The APTGL40X120T3G has many advantages:
- Integrated IGBTs, diodes, and capacitors providing superior reliability.
- Low power losses and high efficiency.
- Robust design for operation in harsh industrial environments.
- High power density for a smaller form factor.
- High switching and input frequencies.
Because of its high reliability and efficient performance, the APTGL40X120T3G is well suited for a variety of applications, such as motor control and power systems. Because of its robust design, the modules can handle high current and temperature levels without thermal noise, making it a reliable choice for power systems requiring high levels of performance.
The specific data is subject to PDF, and the above content is for reference
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