BCX55-16,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	1.25W
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	BCX55

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The BCX55-16,115 is a Bipolar (BJT) Single Transistor that is commonly used for switch mode applications due to its ability to rapidly switch on and off. The transistor is a 3-terminal, NPN transistor that is typically used in power switching circuits when low-level signals from a controller are used to control relatively high-power loads such as motors, lights, and amplifiers. This particular transistor is also notable for its ability to withstand high temperatures and high current surges, making it an ideal choice for a wide range of applications. The device is also capable of working in both PNP and NPN configurations, making it suitable for a variety of switching purposes. The BCX55-16,115 is an enhancement-mode power transistor that consists of two layers of P-type and N-type semiconductor material, which creates an electrically-active region between them. The two types of semiconductor material are arranged in a vertical structure, with the base and emitter of the transistor being located on the same layer. When the Gate voltage of the transistor is increased, electrons are injected into the N-type semiconductor layer and holes are injected into the P-type layer. The electrons and holes then travel through the semiconductor layers and to the base-emitter junction. At the base-emitter junction, the electrons in the N-type semiconductor and the holes in the P-type layer recombine, creating a current that flows from the collector to the emitter. As the Gate voltage is increased even further, the base-emitter current is also increased and the transistor is “turned on”. The Electromotive Force (emf) generated by the base-emitter current increases, allowing electrons to flow from the collector to the emitter. This collector current is then amplified, supplying even more current to the load. The BCX55-16,115 is a versatile switching device due to its ability to rapidly and accurately switch on and off. This makes it an ideal choice for use in a wide range of applications and industries, such as power switching for motors, amplifiers, and lights. The device is also capable of working in both PNP and NPN configurations and is capable of withstanding extremely high temperatures and surges, making it a suitable choice for industrial and automotive applications.

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