BCX5410E6327 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	2W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89
Base Part Number:	BCX54

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Introduction

BCX5410E6327 is a high- voltage, high current and high switching performance power transistor. As part of the BCX54x family, it has become a popular choice for a wide range of applications such as motor control, power management, power supplies and DC/DC converters.

Application Field

BCX5410E6327 can be used in a variety of power management applications, including motor drives and control, power amplifiers, and DC/DC converters. Its high voltage, high current and high switching performance make it suitable for many demanding applications. It is also widely used in telecommunications equipment and automotive electronics.In addition, BCX5410E6327 is an effective choice for low-cost, high-efficiency power conversion. The maximum VDSS voltage rating of 20 volts makes the BCX5410E6327 suitable for many applications in commercial and industrial settings.

Working Principle

BCX5410E6327 is a bipolar transistor, which is a type of transistor device that relies on the movement of charge carriers to produce a current. This type of transistor is also referred to as a "rectifier" because it rectifies or controls the direction of a current. A bipolar transistor is composed of two p-type and n-type semiconductor regions, commonly referred to as the base and collector.The working principle of the BCX5410E6327 works in the same way as other bipolar transistors, except it has an extra region. The extra region, known as the emitter, produces the majority of the current in the device. When a positive voltage is applied to the base, the base-collector junction of the device becomes forward-biased and current begins to flow from the emitter to the collector. This process is known as forward-biased.The current from the emitter can be further controlled by varying the base-emitter voltage. A higher voltage across the base and emitter will increase the current flow, while a lower voltage will decrease the current. This changes the amount of current that is produced in the device, and thus changes the resistance in the circuit.

Conclusion

BCX5410E6327 is an effective choice for high voltage, high current and high switching performance applications. Its wide range of application field, robust performance and low-cost make the BCX5410E6327 a popular choice for many designers and engineers. The working principle of BCX5410E6327 is similar to other bipolar transistors, with an additional region in the device that provides a greater current production when a positive voltage is applied.

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