Allicdata Part #: | 1727-6210-2-ND |
Manufacturer Part#: |
BCX54-10,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 45V 1A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 1A 180MHz 1.25W S... |
DataSheet: | BCX54-10,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.06615 |
2000 +: | $ 0.05954 |
5000 +: | $ 0.05623 |
10000 +: | $ 0.05127 |
25000 +: | $ 0.04796 |
50000 +: | $ 0.04410 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BCX54 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The BCX54-10,115 is a high-power silicon-germanium NPN transistor of the Bipolar (BJT) Single type. It is designed to handle high power applications including RF power amplification and switching circuits. It offers low noise, high gain, and excellent linearity, making it well-suited for a variety of demanding applications.
Application Field
The BCX54-10,115 is well-suited for a wide range of applications that require high power amplificatioin, such as RF amplifiers, high-power transmitters, RF switches and modulators. It can be used in automotive, industrial, and communications systems. The device is also suitable for use in high-power radar systems, sweep generators and sonar systems.
Working Principle
The BCX54-10,115 is a NPN type transistor, which means that it allows current to flow through it when current is applied to the Base terminal. When the Base receives current, electrons in the Collector region are attracted to the Base. This creates a number of holes in the Collector region, which allow a current to flow from the Emitter to the Collector. This is the current amplification effect that makes the BCX54-10,115 so suitable for high-power amplification.
The BCX54-10,115 also utilizes its wide band gap to provide superior gain and linearity. The wide band gap provides higher gain and lower noise than traditional silicon BJT transistors, making it well-suited for use in applications requiring low distortion or precision switching. The device also offers excellent thermal stability for improved reliability.
Conclusion
The BCX54-10,115 is a high-power NPN transistor designed for use in RF power amplifiers and switching circuits. The device offers low noise, high gain, and excellent linearity, making it well-suited for a variety of demanding applications. The wide band gap provides superior gain and linearity, while the excellent thermal stability ensures improved reliability. The BCX54-10,115 is an ideal choice for automotive, industrial, and communication applications that require high-power amplification.
The specific data is subject to PDF, and the above content is for reference
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