1N3612 Allicdata Electronics

1N3612 Discrete Semiconductor Products

Allicdata Part #:

1N3612S-ND

Manufacturer Part#:

1N3612

Price: $ 4.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Semtech Corporation
Short Description: DIODE GEN PURP 400V 1A AXIAL
More Detail: Diode Standard 400V 1A Through Hole Axial
DataSheet: 1N3612 datasheet1N3612 Datasheet/PDF
Quantity: 1000
250 +: $ 3.71103
Stock 1000Can Ship Immediately
$ 4.12
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Description

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The 1N3612 is a single rectifier diode designed to handle large current applications. It is used most often in automotive, industrial, and communications applications to provide efficient rectification of AC or DC signals, or to protect circuits from over-voltage conditions. The 1N3612 is also useful for blocking and rectifying higher voltage AC and DC signals.

The 1N3612 device is a two-terminal rectifier come with a common cathode and a separate anode. It has a low forward drop due to the thin layers of P- and N-type materials that form the rectifying junction and a low power dissipation level to promote longer life and better energy efficiency. This diode features reverse leakage current that is typically 1mA for a reverse voltage of 50V, with a reverse voltage of 1KV and a forward current of 1A.

In addition, the 1N3612 has excellent surge capacity and reverse voltage capability. The surge capacity of the 1N3612 is 30A, which enables it to withstand large peak currents, while its reverse voltage capability is up to 200V, allowing it to be used in higher voltage circuits. The low junction capacitance and the high maximum allowable temperature both contribute to the device’s long life.

In terms of its physical characteristics, the 1N3612 has a small surface mount package design, which allows it to be used in tight areas and allows for improved heat dissipation, helping to protect the device from overheating. It also has a plastic encapsulated construction, which helps protect the device from environmental stress such as moisture and contamination.

The working principle of the 1N3612 is that current flow through the device in one direction only. This is due to the properties of the P- and N-type materials, which form a rectifying junction and allow current to only flow in one direction. When current is applied in the forward direction, electrons enter the N-type material, creating an electron surplus and making it more positive. This forms an electron-hole pair, and the electron hole pair is attracted and carries the current.

When a reverse voltage is applied, however, the majority holes in the P-type material have no electrons to fill them, and the N-type material has no extra holes to be filled by electrons. This prevents the circulation of current and prevents reverse voltage from flowing through the diode. This is the essential feature of the 1N3612 and allows it to fulfill its purpose of rectifying AC or DC signals and protecting circuits from over-voltage conditions.

In conclusion, the 1N3612 single rectifier diode is an essential component for many electrical applications, such as automotive, industrial, and communications. It features high surge capacity, low power dissipation, low forward drop and high reverse voltage capability to help circuits operate safely and reliably. It also has excellent electrical characteristics and physical characteristics, with a plastic encapsulated construction and a small surface mount package design.

The specific data is subject to PDF, and the above content is for reference

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