
1N3612 Discrete Semiconductor Products |
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Allicdata Part #: | 1N3612S-ND |
Manufacturer Part#: |
1N3612 |
Price: | $ 4.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 400V 1A AXIAL |
More Detail: | Diode Standard 400V 1A Through Hole Axial |
DataSheet: | ![]() |
Quantity: | 1000 |
250 +: | $ 3.71103 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 500nA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N3612 is a single rectifier diode designed to handle large current applications. It is used most often in automotive, industrial, and communications applications to provide efficient rectification of AC or DC signals, or to protect circuits from over-voltage conditions. The 1N3612 is also useful for blocking and rectifying higher voltage AC and DC signals.
The 1N3612 device is a two-terminal rectifier come with a common cathode and a separate anode. It has a low forward drop due to the thin layers of P- and N-type materials that form the rectifying junction and a low power dissipation level to promote longer life and better energy efficiency. This diode features reverse leakage current that is typically 1mA for a reverse voltage of 50V, with a reverse voltage of 1KV and a forward current of 1A.
In addition, the 1N3612 has excellent surge capacity and reverse voltage capability. The surge capacity of the 1N3612 is 30A, which enables it to withstand large peak currents, while its reverse voltage capability is up to 200V, allowing it to be used in higher voltage circuits. The low junction capacitance and the high maximum allowable temperature both contribute to the device’s long life.
In terms of its physical characteristics, the 1N3612 has a small surface mount package design, which allows it to be used in tight areas and allows for improved heat dissipation, helping to protect the device from overheating. It also has a plastic encapsulated construction, which helps protect the device from environmental stress such as moisture and contamination.
The working principle of the 1N3612 is that current flow through the device in one direction only. This is due to the properties of the P- and N-type materials, which form a rectifying junction and allow current to only flow in one direction. When current is applied in the forward direction, electrons enter the N-type material, creating an electron surplus and making it more positive. This forms an electron-hole pair, and the electron hole pair is attracted and carries the current.
When a reverse voltage is applied, however, the majority holes in the P-type material have no electrons to fill them, and the N-type material has no extra holes to be filled by electrons. This prevents the circulation of current and prevents reverse voltage from flowing through the diode. This is the essential feature of the 1N3612 and allows it to fulfill its purpose of rectifying AC or DC signals and protecting circuits from over-voltage conditions.
In conclusion, the 1N3612 single rectifier diode is an essential component for many electrical applications, such as automotive, industrial, and communications. It features high surge capacity, low power dissipation, low forward drop and high reverse voltage capability to help circuits operate safely and reliably. It also has excellent electrical characteristics and physical characteristics, with a plastic encapsulated construction and a small surface mount package design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N3611GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3613GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3613GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3614GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
VS-1N3673A | Vishay Semic... | 4.62 $ | 78 | DIODE GEN PURP 1KV 12A DO... |
1N3672 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3612 | Semtech Corp... | 4.12 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N3612GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3612GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3614 | Semtech Corp... | 3.87 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
VS-1N3624R | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3671 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3644 | Semtech Corp... | 6.52 $ | 1000 | MIL, QPL PART, 0.250A. 15... |
1N3611GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3646 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2.5KV 600M... |
1N3611 | Microsemi Co... | 4.82 $ | 186 | DIODE GEN PURP 200V 1A AX... |
1N3611GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3647 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 3KV 600MA ... |
1N3673A | GeneSiC Semi... | 3.7 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3612GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
VS-1N3670A | Vishay Semic... | 3.3 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3611GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3671A | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3624 | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3611GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
VS-1N3673RA | Vishay Semic... | 3.49 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3611GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A DO... |
1N3645 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2KV 600MA ... |
VS-1N3672A | Vishay Semic... | 3.45 $ | 1000 | DIODE GEN PURP 900V 12A D... |
1N3614GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3613GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3612GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3611E3 | Microsemi Co... | 3.7 $ | 1000 | RECTIFIER STANDARD RECOVE... |
1N3613 | Semtech Corp... | 3.77 $ | 1000 | DIODE GEN PURP 600V 1A AX... |
1N3600 | Microsemi Co... | -- | 1000 | DIODE GEN PURP 50V 200MA ... |
1N3643 | Microsemi Co... | 10.49 $ | 1000 | DIODE GEN PURP 1KV 250MA ... |
1N3673AR | GeneSiC Semi... | 4.03 $ | 35 | DIODE GEN PURP REV 1KV 12... |
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