1N3646 Discrete Semiconductor Products |
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Allicdata Part #: | 1N3646S-ND |
Manufacturer Part#: |
1N3646 |
Price: | $ 6.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 2.5KV 600MA AXIAL |
More Detail: | Diode Standard 2500V 600mA Through Hole Axial |
DataSheet: | 1N3646 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 5.86487 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 2500V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 5V @ 250mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 1µA @ 2500V |
Capacitance @ Vr, F: | 8pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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1N3646 – Application Field and Working Principle
Diodes, or rectifier diodes, are essential components in modern electronics, where their ability to convert alternating current (AC) to direct current (DC) power is of paramount importance. The 1N3646 is a single diode rectifier, being a component part of the 1N3645-1N3640 series, which has a range of ratings allowing it to be used in a wide variety of devices and applications. In this article, we will look at the application field and working principle of the 1N3646.
Application Fields of the 1N3646
The 1N3646 has a wide range of rated parameters, making it suitable for use in a variety of electrical devices and circuits. Its 1500V maximum voltage rating, combined with a 60V DC reverse voltage rating, makes it ideal for use in applications where high voltage rectification is needed, such as television sets, voltage converters, and uninterruptible power supplies. The low leakage current and minimal capacitance of the device make it suitable for use in audio circuits, where these properties are key to good sound quality.
The low forward voltage of the 1N3646 makes it ideal for use in many battery-powered circuits, such as radio-controlled vehicles and toys. In these applications it has the additional benefit of being able to easily handle the current peaks that can occur during recharging cycles, or peak current draw by motor drives. Additionally, the device is suitable for use in surge protection applications, as its high surge capability is ideal for limiting the amount of current that is conducted through the device in a fault condition.
Working Principle of the 1N3646
The 1N3646 is a single diode unit, composed of two semiconductor layers, one of p-type material and one of n-type material, separated at one end by a very thin pn-junction. During normal operation, the voltage applied between these two layers, known as the forward voltage, causes a current to flow through the device. This current flow is unidirectional, in that it will only pass through the device in one direction. The flow of current is due to the movement of electrons, negatively charged, occurring in one direction across the pn-junction.
In the reverse direction, the applied voltage will cause a very low current, if any, to flow through the device. It is this unidirectional flow of current, with very low levels in the reverse direction, which makes the 1N3646 and other rectifier diodes so important in many applications. It is this principle that is used to convert an AC voltage to a DC voltage, by only allowing current flow during the positive parts of the cycle, where the voltage is above 0V.
The 1N3646 is rated for maximum voltage and current levels, which should not be exceeded during operation. Over-voltage or over-current conditions can cause the device to become damaged or destroyed, which, in many cases, will render the device inoperable. The device also has a thermal ratings, in terms of maximum permissible power dissipation, which should also be taken into account, especially when used in more power-hungry circuits.
Summary
The 1N3646 rectifier diode is a single device, typically composed of two p-type and n-type semiconductor layers, separated at one end by a pn-junction. During normal operation, the applied voltage causes a very low current to flow in the reverse direction, while a larger current flows in the forward direction. The 1N3646 is rated for use in a range of applications, such as battery-powered circuits and voltage converters, due to its low forward and reverse voltage ratings, and high surge capability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N3611GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A DO... |
VS-1N3673A | Vishay Semic... | 4.62 $ | 78 | DIODE GEN PURP 1KV 12A DO... |
1N3600 | Microsemi Co... | -- | 1000 | DIODE GEN PURP 50V 200MA ... |
1N3612GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611 | Microsemi Co... | 4.82 $ | 186 | DIODE GEN PURP 200V 1A AX... |
1N3673AR | GeneSiC Semi... | 4.03 $ | 35 | DIODE GEN PURP REV 1KV 12... |
VS-1N3624 | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
VS-1N3624R | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
VS-1N3670A | Vishay Semic... | 3.3 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3671A | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3672A | Vishay Semic... | 3.45 $ | 1000 | DIODE GEN PURP 900V 12A D... |
VS-1N3671A | Vishay Semic... | 3.47 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3671RA | Vishay Semic... | 3.47 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3673RA | Vishay Semic... | 3.49 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3671AR | GeneSiC Semi... | 3.58 $ | 1000 | DIODE GEN PURP REV 800V 1... |
1N3611E3 | Microsemi Co... | 3.7 $ | 1000 | RECTIFIER STANDARD RECOVE... |
1N3673A | GeneSiC Semi... | 3.7 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3613 | Semtech Corp... | 3.77 $ | 1000 | DIODE GEN PURP 600V 1A AX... |
1N3614 | Semtech Corp... | 3.87 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
1N3612 | Semtech Corp... | 4.12 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N3645 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2KV 600MA ... |
1N3646 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2.5KV 600M... |
1N3644 | Semtech Corp... | 6.52 $ | 1000 | MIL, QPL PART, 0.250A. 15... |
1N3647 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 3KV 600MA ... |
1N3643 | Microsemi Co... | 10.49 $ | 1000 | DIODE GEN PURP 1KV 250MA ... |
1N3671 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3672 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3673 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3611GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3611GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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