
Allicdata Part #: | 1N3672-ND |
Manufacturer Part#: |
1N3672 |
Price: | $ 21.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | STANDARD RECTIFIER |
More Detail: | Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 19.22070 |
Series: | * |
Part Status: | Active |
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1N3672 Application Field and Working Principle
The 1N3672 diode is a single-phase, full-wave rectifier designed for full-wave power supply applications. It is typically used for general purpose rectification, with a range of operating voltages up to 1000 volt peak inverse voltage (Vp) and a continuous current rating of 10 amps at temperature of 80 °C. It is often used as a speed control switch as it provides very fast turn-on/turn-off times. The 1N3672 is a solid-state device that is well-suited for many switching applications, providing improved reliability and fast response times.
The 1N3672 is a generic diode and is available in both leaded and lead-less versions. It is typically packaged in a DO-214BA or SMA-type package for ease of installation. The device has a number of advantages over other diodes, including higher peak inverse voltage ratings, lower forward-voltage drop, fast switching capabilities, and excellent thermal management.
The 1N3672 diode consists of two main components: a silicon body and a metal-oxide-semiconductor field-effect transistor (MOSFET). The body of the diode is a semiconductor layer sandwiched between two metal plates. The layers are connected together by doping, which forms a PN junction.
When the diode is forward biased, electrons flow from the N-type layer to the P-type layer. This creates an electric field across the diode, known as the depletion region. The depletion region maintains a nonconducting path between the electrodes, allowing the electric field to affect only the current carriers in the depletion region.
In reverse operation, the depletion region is reduced, allowing current to flow from the P-type to the N- type layer. This produces a negative potential in the depletion region, allowing electric current to flow in one direction. As the applied voltage decreases, the depletion region increases, allowing current to flow in both directions.
In addition to its use as a rectifier, the 1N3672 can also be used as a switching element for applications such as voltage regulators and motor control circuits. The diode has a low forward-voltage drop, allowing for efficient power conversion and accuracy in voltage regulation. It is also capable of rapidly recovering from forward- and reverse-breakdown conditions, allowing flip-flop and other switching functions to be implemented.
The 1N3672 diode is a versatile device that is suitable for many rectification and switching applications. Its excellent thermal management and fast switching performance make it an ideal solution for a wide range of electronic products.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N3611GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3613GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3613GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3614GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
VS-1N3673A | Vishay Semic... | 4.62 $ | 78 | DIODE GEN PURP 1KV 12A DO... |
1N3672 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3612 | Semtech Corp... | 4.12 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N3612GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3612GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3614 | Semtech Corp... | 3.87 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
VS-1N3624R | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3671 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3644 | Semtech Corp... | 6.52 $ | 1000 | MIL, QPL PART, 0.250A. 15... |
1N3611GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3646 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2.5KV 600M... |
1N3611 | Microsemi Co... | 4.82 $ | 186 | DIODE GEN PURP 200V 1A AX... |
1N3611GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3647 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 3KV 600MA ... |
1N3673A | GeneSiC Semi... | 3.7 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3612GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
VS-1N3670A | Vishay Semic... | 3.3 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3611GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3671A | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3624 | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3611GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
VS-1N3673RA | Vishay Semic... | 3.49 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3611GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A DO... |
1N3645 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2KV 600MA ... |
VS-1N3672A | Vishay Semic... | 3.45 $ | 1000 | DIODE GEN PURP 900V 12A D... |
1N3614GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3613GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3612GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO-204A... |
1N3611E3 | Microsemi Co... | 3.7 $ | 1000 | RECTIFIER STANDARD RECOVE... |
1N3613 | Semtech Corp... | 3.77 $ | 1000 | DIODE GEN PURP 600V 1A AX... |
1N3600 | Microsemi Co... | -- | 1000 | DIODE GEN PURP 50V 200MA ... |
1N3643 | Microsemi Co... | 10.49 $ | 1000 | DIODE GEN PURP 1KV 250MA ... |
1N3673AR | GeneSiC Semi... | 4.03 $ | 35 | DIODE GEN PURP REV 1KV 12... |
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