1N3671AR Discrete Semiconductor Products |
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Allicdata Part #: | 1242-1036-ND |
Manufacturer Part#: |
1N3671AR |
Price: | $ 3.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 800V 12A DO4 |
More Detail: | Diode Standard, Reverse Polarity 800V 12A Chassis,... |
DataSheet: | 1N3671AR Datasheet/PDF |
Quantity: | 1000 |
95 +: | $ 3.21844 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 12A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 200°C |
Base Part Number: | 1N3671AR |
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Diodes - Rectifiers - Single
The 1N3671AR rectifier is a silicon power rectifier, specifically a single type of rectifier. It is a high current rectifier with a voltage range of 1000 V (cathode negative) or less. Its main application is in motor control, and it works by rectifying AC power into DC power. Its peak pulse current rating is up to 400 A, making it capable of power inverter applications.
It has a maximum average forward current rating of 375 A, with an average reverse DC leakage current rating of 5 mA. Its capacitance is 15 pF, making it suitable for high frequency applications. Its reverse recovery time is 0.4 μs, which means that it can support high speed switching.
The 1N3671AR rectifier is a built-in package, so it is easy to install. It has an ESD level of 8 kV in human body models and can be used in temperatures ranging from -55°C to 150°C. It also offers excellent surge capability, with maximum surge current ratings up to 800 A.
The rectifier works by allowing current to flow in one direction while blocking the flow in the other direction. It is a two-terminal device, with the anode and cathode terminals. It has a PN junction that acts as a one-way valve, allowing current to flow only in one direction.
When anode voltage rises above the cathode voltage, the diode starts to conduct and current passes through the device. When the cathode voltage rises above the anode voltage, the diode becomes reverse biased and no current passes. This process is known as rectification and is the basis for all rectifiers.
The 1N3671AR is a versatile and reliable rectifier suitable for a variety of applications. It can be used in motor drives, surge protection, high frequency switching applications and more. Its small size and high current rating make it ideal for power inverters, and its high frequency characteristics make it suitable for a wide range of applications.
In summary, the 1N3671AR rectifier is a high current power rectifier suitable for a wide range of applications. Its high current ratings make it suitable for use in power inverters, and its small size and high frequency performance make it ideal for high frequency switching applications. Its ESD protection and wide temperature range make it suitable for a variety of different power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N3611GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 200V 1A DO... |
VS-1N3673A | Vishay Semic... | 4.62 $ | 78 | DIODE GEN PURP 1KV 12A DO... |
1N3600 | Microsemi Co... | -- | 1000 | DIODE GEN PURP 50V 200MA ... |
1N3612GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611 | Microsemi Co... | 4.82 $ | 186 | DIODE GEN PURP 200V 1A AX... |
1N3673AR | GeneSiC Semi... | 4.03 $ | 35 | DIODE GEN PURP REV 1KV 12... |
VS-1N3624 | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
VS-1N3624R | Vishay Semic... | 3.05 $ | 1000 | DIODE GEN PURP 700V 12A D... |
VS-1N3670A | Vishay Semic... | 3.3 $ | 1000 | DIODE GEN PURP 700V 12A D... |
1N3671A | GeneSiC Semi... | 3.41 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3672A | Vishay Semic... | 3.45 $ | 1000 | DIODE GEN PURP 900V 12A D... |
VS-1N3671A | Vishay Semic... | 3.47 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3671RA | Vishay Semic... | 3.47 $ | 1000 | DIODE GEN PURP 800V 12A D... |
VS-1N3673RA | Vishay Semic... | 3.49 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3671AR | GeneSiC Semi... | 3.58 $ | 1000 | DIODE GEN PURP REV 800V 1... |
1N3611E3 | Microsemi Co... | 3.7 $ | 1000 | RECTIFIER STANDARD RECOVE... |
1N3673A | GeneSiC Semi... | 3.7 $ | 1000 | DIODE GEN PURP 1KV 12A DO... |
1N3613 | Semtech Corp... | 3.77 $ | 1000 | DIODE GEN PURP 600V 1A AX... |
1N3614 | Semtech Corp... | 3.87 $ | 1000 | DIODE GEN PURP 800V 1A AX... |
1N3612 | Semtech Corp... | 4.12 $ | 1000 | DIODE GEN PURP 400V 1A AX... |
1N3645 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2KV 600MA ... |
1N3646 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 2.5KV 600M... |
1N3644 | Semtech Corp... | 6.52 $ | 1000 | MIL, QPL PART, 0.250A. 15... |
1N3647 | Semtech Corp... | 6.52 $ | 1000 | DIODE GEN PURP 3KV 600MA ... |
1N3643 | Microsemi Co... | 10.49 $ | 1000 | DIODE GEN PURP 1KV 250MA ... |
1N3671 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3672 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3673 | Microsemi Co... | 21.36 $ | 1000 | STANDARD RECTIFIERDiode |
1N3611GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3612GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N3613GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N3611GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N3611GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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