
Allicdata Part #: | 1N5401GHA0G-ND |
Manufacturer Part#: |
1N5401GHA0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 3A DO201AD |
More Detail: | Diode Standard 100V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.05398 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N5401GHA0G is a single, medium power silicon rectifiers diode with a low forward voltage drop and an excellent non-repetitive peak forward surge current rating. It is designed for applications such as print heads, switching power supplies, motor control, rectification and freewheeling of circuit protection, infra-red detectors, motor control, industrial equipment and consumer appliances.
In the 1N5401GHA0G diode, the anode is typically the positive current terminal and the cathode is the negative one. The current flows through the diode in one direction only and therefore can be used in full-wave or bridge rectification circuits. When a voltage potential across the terminals is above a certain level, called the forward breakover voltage, a current flows through the diode, allowing current to flow through the circuit. In reverse-bias condition, the diode is not allowing any current. This phenomenon is called the rectifying effect. In the Forward-Bias condition, the diode has a very low rate of voltage change compared to resistors and therefore works as a voltage regulator. It is also used for signal isolation, signal merging, current limiting and voltage level shifting.
1N5401GHA0G diode is encapsulated in epoxy that provides excellent mechanical protection, insulation and high moisture resistance. It can operate in temperatures from -65 to +150 degrees Celsius. The forward voltage drop of the 1N5401GHA0G for 1A current can be as low as 0.9 volts and high as 1.5 volts depending on the temperature, forward current and reverse bias condition within the circuit. The reverse voltage rating can vary from 50V, 25V, 20V and 10V and the peak forward current can be up to 1A.
The 1N5401GHA0G diode is mainly used in switching power supplies, rectification and freewheeling circuits, industrial power supplies and consumer electronics. But it can also be used in circuit protection, signal isolation, photodiode protection and in low-noise rectifiers. The devices are RoHS compliant and feature "zero-plus" current rating, low reverse voltage and high temperature capability.
The 1N5401GHA0G rectifier diode is an integral part of power electronics and works in both directions. When current flows through it in the forward direction, the diode allows current to flow from anode to cathode, and in reverse direction, the diode prevents current from flowing from anode to cathode. The minimum breakdown voltage of the 1N5401GHA0G across the anode and cathode is typically 20V in forward bias and 50V in reverse bias. It has low-power losses resulting in high efficiency. The temperature range of the device makes it suitable for many applications. The package and polarity are also important when selecting the right diode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5417C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 200V 4.5A ... |
1N5402GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP 3A DO-201ADDiod... |
1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
1N5404TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
