
Allicdata Part #: | 1N5408-E3/51GI-ND |
Manufacturer Part#: |
1N5408-E3/51 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 3A DO201AD |
More Detail: | Diode Standard 1000V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | 1N5408 |
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The 1N5408-E3/51 is a high-performance rectifier diode. It has single-phase bridge rectification, which is a feature that allows it to convert alternating current into direct current. Its design is optimized to handle large power loads, making it ideal for use in industrial and commercial applications. The 1N5408-E3/51 is a robust design, with a high surge current rating of 500A at 90°C and 50A peak forward average current.
The 1N5408-E3/51 has a reverse recovery time of 10ns, and its capacitance of 1.7pF is relatively low. This allows it to operate at low frequencies, which is useful in applications where low-voltage DC power is needed. The thermal resistance of the 1N5408-E3/51 is also particularly low, making it suitable for high-temperature operation.
The 1N5408-E3/51 is a glass Passivated Junction (GPJ) type diode, which means that its junction is surrounded by a protective layer of glass that prevents the junction from being damaged by physical contact, exposure to air, or thermal stress. This feature ensures that the 1N5408-E3/51 has a long life span.
Working Principle
The 1N5408-E3/51 operates by relying on the unidirectional flow of electrons in a semiconductor. In a forward bias configuration, the diode will allow current to pass through it in the form of a direct current. When there is a reverse bias, the diode will not allow any current to pass through and will act as an open circuit. This property allows the 1N5408-E3/51 to act as a rectifier, converting AC current into DC current.
Applications
The 1N5408-E3/51 is suitable for use in a wide range of applications. It is commonly used in power supplies, motor controllers, electronic equipment, and led lighting fixtures. It is also used as a replacement diode in many types of electronic circuits, such as bridge rectifiers, voltage regulators, and inverters. Additionally, its low capacitance makes it ideal for low-voltage DC circuits.
Conclusion
The 1N5408-E3/51 is a robust, single-phase bridge rectifier with a high surge current rating and low capacitance. Its glass Passivated Junction (GPJ) design ensures a long life span, and its low thermal resistance makes it suitable for high-temperature applications. The 1N5408-E3/51 is a versatile diode, suitable for a wide range of applications, including power supplies, motor controllers, and led lighting fixtures.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
1N5404TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
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