
Allicdata Part #: | 1N5404GHB0G-ND |
Manufacturer Part#: |
1N5404GHB0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 3A DO201AD |
More Detail: | Diode Standard 400V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.05398 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The 1N5404GHB0G is a type of single-phase rectifier diode, more commonly known as a silicon rectifier diode. Its main purpose is to convert alternating current (AC) power into direct current (DC) power. This makes it an important part of power supply circuits, providing the necessary DC power for the operation of consumer electronics and other electrical equipment.
The 1N5404GHB0G is a 3.0 A, 400 V diode, and it is capable of blocking voltages in excess of 650 V. Although it is mainly used for general-purpose rectification, it is particularly suited for use in switch mode power supplies that require the highest levels of efficiency and power conversion accuracy. It also features very low forward and reverse recovery times, making it suitable for high frequency and high power applications.
In terms of its construction, the 1N5404GHB0G is made up of four layers of semiconductor materials, known as PN diode junctions. It is designed to handle voltages up to 400 V, making it suitable for a variety of applications. In essence, the way it works is by allowing current to flow in one direction and blocking it in the other direction. This is known as rectification, which is an important step in the conversion of AC and DC power.
To understand the way in which the 1N5404GHB0G works, it is important to look at its application field and working principle. The primary application field of the 1N5404GHB0G is in switch mode power supplies, especially ones with high efficiency requirements. It can be used in a variety of AC-DC power conversion tasks, such as AC ripple rectification, DC-DC converter input rectification, remote DC feedback regulation, input current smoothing and overvoltage protection. In all of these applications, it is important that the diode works accurately and reliably.
The principle of operation of the 1N5404GHB0G is that it allows current to flow in only one direction, while blocking it in the opposite direction. This is known as rectification. It is achieved through the PN junctions inside the diode. The two layers that make up these junctions, the anode and the cathode, are designed in such a way that they allow current to flow in one direction only. When this occurs, the rectified current is produced. Because of its ability to perform rectification accurately at high frequencies, the 1N5404GHB0G is used in many power conversion tasks.
In summary, the 1N5404GHB0G is a type of single-phase rectifier diode that is specially designed for use in switch mode power supplies. It is made up of four layers of semiconductor materials, which form the PN diode junctions. These junctions allow current to flow in one direction only, producing rectified current. Due to its ability to handle the high frequencies and voltages required for efficient power conversion, and its low forward and reverse recovery times, the 1N5404GHB0G is well suited for a variety of power conversion tasks.
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1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
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