Allicdata Part #: | 1086-20668-ND |
Manufacturer Part#: |
2N2218AL |
Price: | $ 7.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 50V 0.8A TO5 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 800mW Thro... |
DataSheet: | 2N2218AL Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 6.62628 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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The 2N2218AL is a bipolar Junction Transistor (BJT) with a single collector-base-emitter structure. It is a low power, high gain NPN device used in a variety of applications. It features a low saturation voltage of 0.35v and high current gain of 600.
The 2N2218AL is suited for a wide range of low-power applications including analog driving circuits, Oscillators, radio frequency amplifiers, high speed switches, and discrete audio amplifiers. It is also used in timing circuits, logic drivers, protection diodes, high frequency service level controls, and voltage regulators.
The 2N2218AL has three leads: the collector, base and emitter. The collector and emitter are the points at which current enters (collector) and exits (emitter) the transistor, while the base forms a link between them. It requires electricity to pass through the base lead to activate the device and allow current to flow from the collector to the emitter. This process is known as current biasing.
When the base-emitter voltage increases, the current flow from collector to emitter increases as well. This process is known as saturation. Conversely, if the base-emitter voltage decreases, the current flow from collector to emitter decreases as well. This process is known as cut-off. The gain or amplification of the device increases as the base-emitter voltage increases and decreases inversely when the base-emitter voltage decreases.
The 2N2218AL has a maximum operating junction temperature of 150°C and a maximum power dissipation of 350mW. It has a collector-base breakdown voltage of 40V, with a minimum guaranteed voltage gain of 20 at a collector current of 100mA. The maximum current gain is 600 with a collector-emitter voltage of 4V and base-emitter voltage of 1V.
The typical applications of the 2N2218AL include:
- Analog driving circuits
- Timing circuits
- High speed switches
- Oscillators
- Voltage regulators
- Logic drivers
- Protection diodes
- Discrete audio amplifiers
- High frequency service level controls
- Radio frequency amplifiers
In conclusion, the 2N2218AL is a low power, high gain NPN device, used for a variety of applications including analog driving circuits, timing circuits, high speed switches, Oscillators, voltage regulators, logic drivers, protection diodes, discrete audio amplifiers and high frequency service level controls. Its low saturation voltage and high current gain make it a suitable choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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