2N2270 Allicdata Electronics
Allicdata Part #:

2N2270-ND

Manufacturer Part#:

2N2270

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 45V 1A TO-39
More Detail: Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Thro...
DataSheet: 2N2270 datasheet2N2270 Datasheet/PDF
Quantity: 661
Stock 661Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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A 2N2270 is a common type of bipolar transistor commonly used in electronics. It is a form of transistor that utilizes voltage at a low level, when compared to transistors of the same type, to accurately control current between two ends of an insulated base layer. This type of transistor is also known as a PNP- or NPN-type device. This type of transistor is ideal for both low-noise and high-speed applications, and is compatible with many of the major semiconductors, such as MOSFETs, BJTs, and IGBTs.

The 2N2270 has a simple construction of three layers — P-type, N-type, and base. The N- and P-type layers are typically formed asorients that oppose each other, and the base is typically a thin-film of a low-resistance semiconductor. The N- and P-type layers become the emitter and collector, respectively, and the base layer acts as the path through which the electrons travel when the 2N2270 is used in a circuit. When a voltage is applied to the base region, it causes the N- and P-type layers to separate, forming a layer of electron current in the base layer.

In normal operation, the 2N2270 is connected as an NPN device, with the collector connected to the battery\'s negative terminal and the emitter connected to the battery\'s positive terminal. When the circuit is powered, current will then flow from the collector to the emitter, beginning the junction between the collector and emitter. Any changes in the current flowing through the base layer will cause a corresponding change in the current flowing through the collector and emitter. This forms the basis of the transistor\'s amplifying capabilities, allowing it to perform one of its primary functions — amplification.

A 2N2270 is an excellent choice for audio amplifiers, signal generators, input stages, and other applications requiring low noise and high speed. The high performance and low noise of the 2N2270 makes it one of the most popular choices for audio applications. It is also well suited for applications in the low frequency audio spectrum, such as low frequency signal generators and audio signal processors.

The PNP-type device of a 2N2270 can also be used in applications requiring voltage signal attenuation. When connected as a PNP transistors, the 2N2270 is capable of providing an effective short-circuit to ground when a signal is applied. This type of design is commonly used in circuits to provide voltage signal regulation and noise attenuation.

Thanks to its high current gain, low noise, and ability to operate in a wide range of frequencies, the 2N2270 is a popular choice for many applications. Its common features and advantages make it an ideal choice for a variety of industries and applications, including audio, wireless, and medical. With its wide availability, simplicity, and affordability, the 2N2270 is a popular choice for applications requiring either low- or high-voltage current control, or amplification needs.

The specific data is subject to PDF, and the above content is for reference

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