Allicdata Part #: | 2N2219ACS-ND |
Manufacturer Part#: |
2N2219A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 40V 0.8A TO-39 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 800mA 300MHz 800m... |
DataSheet: | 2N2219A Datasheet/PDF |
Quantity: | 1180 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 800mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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Transistors are an essential part of many electronic devices, and the 2N2219A is no exception. This transistor is an NPN type single bipolar junction transistor (BJT). As such, it is used to control the current in circuits where its signals act as on-off switches. It offers many benefits over other transistor types and is used in a wide range of applications.
The 2N2219A is known for its robustness and durability. It has been designed to withstand extreme temperatures and is used in some of the most demanding applications. This makes it ideal for use in automotive, aviation, and industrial electronics.
The 2N2219A can be used for a variety of purposes, including amplifying, switching, and voltage control. It is used to control the current in circuits by turning circuits on or off. It can also be used to invert signals or to create logic gates. It can also be used to provide increased power in some applications.
The structure of the 2N2219A consists of three layers of semiconductor material. The first is an emitter, which is made of silicon or germanium. The second is a base, which is typically made of silicon or germanium. The third is a collector, which is made of aluminum or gold. By applying a small voltage to the base, the transistor can control a large current between the collector and emitter.
The operating principle of the 2N2219A is based on the PN junction. The PN junction is formed by two layers of doped semiconductor material, one layer with more electrons than the other. When an external voltage is applied, electrons in the more electron-rich layer move to the more electron-poor layer, forming an electric current. This current can be controlled by changing the applied voltage.
The current gain of a transistor is one of its most important characteristics. The 2N2219A has a current gain, also known as beta, of between 40 and 100. This transistor has a good power rating, making it suitable for most applications, and a maximum collector-emitter voltage of 60 volts.
The 2N2219A is a versatile transistor that can be used in a variety of circuits. It is commonly used in amplifiers, switching circuits, logic gates, and voltage control circuits. It is also used in some automotive, aviation, and industrial electronics applications. It is a robust transistor, capable of withstanding high temperatures.
Overall, the 2N2219A is an excellent choice for electronic components. It can be used in a wide variety of circuits and applications, and is able to withstand extreme temperatures. Its current gain and high power rating make it suitable for most applications. The PN junction is the key to understand its working principle, which is based on the movement of electrons through a doped semiconductor material.
The specific data is subject to PDF, and the above content is for reference
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