2N2219AE4

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The 2N2219AE4 is a widely used semiconductor device that is classified as a bipolar junction transistor (BJT). It is part of a larger family of bipolar junction transistors, which includes the commonly available 2N2219A and 2N2219B models. This range of products is designed to provide a low power signal handling ability with sufficient amplification and signal control to meet the needs of most applications.

The 2N2219AE4 delivered by ON Semiconductor has a maximum guaranteed DC collector current of 2 A, a maximum DC gain of 100, a storage temperature of -65°C to 150°C, and an operating temperature range of -55°C to 150°C.

The working principle of a bipolar junction transistor is based upon the current gain of the device, which is tightly described by the equation hFE (commonly known as "Beta") which is given by the equation hFE = I_C / I_B.

The hFE is a measure of the current gain of the transistor and is an important factor in determining the overall action of any BJT circuit. When a small signal is placed on the base, a much larger signal is produced at the collector. This large signal can be used to manipulate other electronic components in the circuit or can also be used to amplify a signal applied to the base of the 2N2219AE4. Additionally, the current gain of BJT\'s also enables them to be used to rectify input signals in electronic circuits.

The 2N2219AE4 is primarily used as a discrete signal amplifier in many applications including audio preamps, switchmode power supplies, power amplifiers and in switching applications. It is also used to boost signal voltage in the ATV transceiver, which will working as a general-purpose switch layer.

The 2N2219AE4 is a versatile transistor with many useful application fields. Its current gain, small size and compact construction make it a popular choice for many applications where a high-performance, low-power, high-reliability amplifier is needed.

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