Allicdata Part #: | 365-1563-ND |
Manufacturer Part#: |
2N2222AUA |
Price: | $ 13.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | TRANS NPN 50V 0.8A SMD |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
DataSheet: | 2N2222AUA Datasheet/PDF |
Quantity: | 364 |
1 +: | $ 12.41100 |
100 +: | $ 11.91970 |
250 +: | $ 11.46600 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-CLCC |
Supplier Device Package: | Ceramic SMD |
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2N2222AUA is a small signal NPN bipolar junction transistor (BJT). It is a single BJT device with a range of applications in areas such as switching and general purpose amplifier applications. The 2N2222AUA is commonly used as a low current switching transistor and for driver stages in various applications. The semiconductor is also found in many audio applications such as amplifiers and tone control circuits.
The 2N2222AUA has a typical collector-emitter rating of 800 mA and a maximum collector-base voltage rating of 45V. It is designed to operate up to 65oC at a collector current of 1.5 A. The transistor has a low noise figure, making it suitable for audio applications. The device typically exhibits an early voltage of 7V and a hFE of 200. The gain and switching characteristics of the device depend on its biasing and the operating conditions at which it is operated.
The 2N2222AUA is a heterojunction transistor, meaning that its active elements have a different band-gap; this increases the stability of the device. This semiconductor consists of three layers of semiconductor materials; a P-type material sandwiched between two N-type materials. The P-type material, consisting mainly of boron, is the base. Its function is to control current flow between the emitter and collector. The two N-type materials consist mainly of arsenic and phosphorus and form the emitter and collector, respectively.
When a voltage is applied to the base, electrons are attracted and flow into the base, creating a flow of current between the emitter and collector. This current is controlled by the amount of voltage applied to the base. Higher voltages result in larger current flows and vice versa. This action turns the device into an amplifier, as the input signal is amplified and output from the collector, with the voltage difference being the same as that of the base. This is referred to as the Common Emitter Configuration.
The 2N2222AUA is a common choice for use in switching and amplifier applications. Most commonly, it is used to drive relays and LEDs in machinery, automotive, and electrical appliances. It can also be used in its common emitter configuration as an amplifier in audio applications. As its power capability is limited to a maximum of 800 mA, its use should be restricted to applications not requiring a large current.
In summary, the 2N2222AUA is a small signal NPN bipolar junction transistor; this is a heterojunction transistor with a collector emitter rating of up to 800 mA. It is commonly used as a low current switching transistor and for driver stages in various applications. Its use should be restricted to applications not requiring large currents.
The specific data is subject to PDF, and the above content is for reference
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