2N2222AUB Allicdata Electronics
Allicdata Part #:

2N2222AUBMS-ND

Manufacturer Part#:

2N2222AUB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 50V 0.8A 3PIN SMD
More Detail: Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf...
DataSheet: 2N2222AUB datasheet2N2222AUB Datasheet/PDF
Quantity: 1505
Stock 1505Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
Description

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Transistors are commonly used in many electronic circuits, and one of the most popular types of transistors is the bipolar junction transistor (BJT). The 2N2222AUB is a type of small signal NPN BJT with wide application. This article will discuss the application field and working principle of the 2N2222AUB.

Application Field of 2N2222AUB

The 2N2222AUB is a 45 Volt, 900 mA Silicon NPN transistor. It is a low-powered semi-conducting device that can be used in a variety of applications, such as switching, amplifier and oscillator circuits. The 2N2222AUB is particularly popular for use in digital circuits and as input and output stages of amplifiers.

This transistor is also extremely popular with hobbyists, who use it to design custom circuits with varying functions. The 2N2222AUB can also be used in some specialty applications, such as wireless applications, due to its low voltage characteristics.

Working Principle of 2N2222AUB

The 2N2222AUB relies on the rules of quantum physics to achieve its operation. The working principle of the transistor is based on the fact that, when electricity passes through it, it creates an electric field that can modify the behavior of the free electrons. Each 2N2222AUB transistor consists of three layers – base, collector and emitter – which are connected by three external connections respectively.

The current flowing through the base of the transistor causes the collector-base junction to become forward biased and allows the electrons to pass from the base to the collector. This causes the collector current to flow and the transistor to amplify current from the input signal. The output signal from the transistor is then amplified further by the transistor’s internal gain.

The gain of a 2N2222AUB transistor can be determined by the ratio of the output current to the input current. The gain of the transistor is determined by the ratio of the collector current to the emitter current. As the emitter current increases, the gain of the transistor increases. The gain of the 2N2222AUB is usually around 200, which is relatively low compared to other types of transistors.

Conclusion

In conclusion, the 2N2222AUB is an NPN bipolar junction transistor with a low power consumption and a wide variety of applications. It can be used in both digital and wireless electronic circuits due to its low voltage characteristics. The working principle of the transistor is based on the fact that, when electricity passes through it, it creates an electric field that can modify the behavior of the free electrons. The gain of the 2N2222AUB is usually around 200, which is relatively low compared to other types of transistors.

The specific data is subject to PDF, and the above content is for reference

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