Allicdata Part #: | 2N2222AUATXV-ND |
Manufacturer Part#: |
2N2222AUATXV |
Price: | $ 16.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | TRANS NPN 50V 0.8A SMT |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
DataSheet: | 2N2222AUATXV Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 15.27620 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-CLCC |
Supplier Device Package: | 4-CLCC (5.59x3.81) |
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Transistors - Bipolar (BJT) - Single
2N2222AUATXV Application Field and Working Principle
The 2N2222AUATXV is an NPN bipolar junction transistor (BJT), often used for switching and amplification in digital and analog circuits. This component provides good performance and it is simple and inexpensive to manufacture. For this reason, it is commonly used in almost all kinds of electronic applications.
A bipolar junction transistor has three terminals, named as the base, collector, and emitter. It is also known as a two-terminal device as two of its terminals are always connected.
The base terminal is the control terminal of the transistor. When a voltage is applied to the base terminal, it causes a current to flow from the collector to the emitter terminal, allowing a larger amount of current to flow from the collector to the emitter. This is known as saturation and is the primary mode of operation of the transistor.
The working principle of the 2N2222AuATXV component depends upon the relative voltages at its terminals. The emitter-base junction requires a certain forward voltage before it begins to conduct. Forward bias is created when the voltage is applied to the base-emitter diode. This causes a current to flow from the collector to the emitter. This current is called the base current and is proportional to the applied voltage.
The collector-emitter junction requires a certain reverse voltage before it begins to conduct. Reverse bias is created when the collector-emitter diode is reverse-biased. This configuration allows a larger current to flow from the collector to the emitter, which can be varied depending on the resistance of the collector circuit.
The current gain of the 2N2222AuATXV component is determined by the ratio of collector current to the base current. As the base current increases, the collector current also increases and this is dependent on the external circuit components used. The 2N2222AuATXV component has a rated maximum current gain of 400 and can be used to switch and amplify current in a wide range of applications.
The 2N2222AuATXV component is commonly used in digital circuits, audio amplification and power supply regulation. It is also used in many industrial and consumer applications such as motor controlling and power supply controllers. The component is also widely used in automotive applications and telecommunications.
In conclusion, the 2N2222AuATXV is a bipolar junction transistor (BJT) used for switching and amplification in digital and analog circuits. Its three terminals are the base, collector, and emitter. The current gain of the component is determined by the ratio of collector current to base current, and it has a rated maximum current gain of 400. It is widely used in many applications such as digital circuits, audio amplification, motor controlling, and power supply controllers, as well as in automotive and telecommunications components.
The specific data is subject to PDF, and the above content is for reference
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