2N5031

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5031 is a high frequency bipolar junction transistor (BJT). It has a collector-emitter voltage rating of 40 volts and a maximum continuous collector current rating of 0.15A. It is usually supplied in a TO-92 package. The 2N5031 has very low capacitance between the collector and base and is, therefore, suitable for use as a wideband or RF transistor.

Application Field

The 2N5031 is a general-purpose small signal transistor suitable for use in a wide range of applications. It has many applications in the radio-frequency (RF) area. This can include both high frequency circuitry, such as FM receivers and transmitters, and low frequency circuits, such as VHF transmitter power amplifier applications. It is also suitable for use as a modulator, oscillator or mixer.

The 2N5031 is also suitable for use in small signal amplifier stages, such as pre-amplifiers, low noise amplifiers, audio amplifiers and output stages. It features low noise and high gain. It can be used as a switching transistor in small signal circuits, such as electronic doorbells and computer power supplies.

Working Principle

The 2N5031 is a bipolar junction transistor, meaning it operates by controlling the flow of charge carriers between two junctions created at the P-type and N-type parts of the semiconductor material used for the transistor.

In an NPN transistor, like the 2N5031, the current flows from the emitter to the collector when the base is forward biased (positive voltage applied). The current flow is controlled by the base-emitter junction. The larger the current flowing in the base the larger the current is flowing from the emitter to the collector. The gain of the transistor (the ratio between the base current and the collector current) is determined by the ratio between the resistances of the base-emitter junction and the collector-emitter junction.

In the 2N5031, the base-emitter junction has a very low capacitance, which is suitable for use at high frequencies. High frequency means the operation frequency is higher than 1 MHz and usually is working in areas of tens MHz or even in several GHz. In high frequency circuits, the capacitance of the BJT plays an important role, since it affects the gain and the output characteristics of the circuit.

In the saturated mode (base-emitter shorted), the 2N5031 can handle up to 0.15A collector current and up to 40V of collector-emitter voltage. These parameters are suitable for low power switching applications, such as computer power supplies, electronic doorbells, etc.

Conclusion

The 2N5031 is a high frequency bipolar junction transistor, suitable for a wide range of applications in the radio-frequency or RF area, including transmitter amplifiers, oscillators, mixers, modulators and high frequency amplifiers. Limited switching capabilities in the saturated mode make it suitable for small-signal switching applications, such as computer power supplies and electronic doorbells. Due to its low capacitance between the collector and base, it is effective at high frequencies and can exhibit good performance in RF circuits.

The specific data is subject to PDF, and the above content is for reference