Allicdata Part #: | 2N5089TAR-ND |
Manufacturer Part#: |
2N5089TAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 100mA 50MHz 625mW... |
DataSheet: | 2N5089TAR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5089 |
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The 2N5089TAR is a general-purpose, NPN Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor, used to provide switching and amplification operations in a wide range of applications.
A bipolar junction transistor is a type of transistor that consists of two semiconductor junctions that make up a three-layer, sandwich-like structure. The current-carrying layer, or base layer, is sandwiched between two other layers, or emitter and collector layers, as illustrated in Figure 1. These junctions allow current to flow through the transistor in a controlled manner. Transistors are considered the basic components of modern electronic circuits and perform switching, amplification and logic operations.
The 2N5089TAR NPN transistor, specifically, has its emitter bonded to the collector layer and its base layer connected to the emitter and collector layers via a pair of contacts, as shown in Figure 2. These contacts, enabled by an external voltage applied to the base contact, effectively turn the transistor on or off, allowing current to pass through the transistor or not, respectively.
The 2N5089TAR is specifically designed for the general-purpose, low-power amplifier applications, having a maximum supply voltage of 25 volts and a maximum collector current of 500 mA. The transistor has a low-noise base and a high-current gain of B = 1000, making it a great choice for audio and radio circuits, as well as automation and measurement devices. Its relatively low collector-emitter saturation voltage (VCE(sat)) of 0.3V also makes it suitable for use in low-voltage, low-power circuits.
The 2N5089TAR works by controlling the flow of current between its emitter and collector contacts using a voltage applied to its base contact. When the voltage at the base contact is low, the transistor is off and no current flows through the transistor. When the voltage is raised to a certain threshold, the transistor turns on and the current flow is controlled by the base-emitter voltage (
The specific data is subject to PDF, and the above content is for reference
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