| Allicdata Part #: | 2N5086TA-ND |
| Manufacturer Part#: |
2N5086TA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 0.1A TO-92 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW... |
| DataSheet: | 2N5086TA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 100µA, 5V |
| Power - Max: | 625mW |
| Frequency - Transition: | 40MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | 2N5086 |
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2N5086TA is a Transistors - Bipolar (BJT) - Single. It is a PNP device used in switching and current amplification. In a typical application, the PNP device acts as a switch to control the flow of current in a circuit. It is suitable for commercial and industrial applications.
The 2N5086TA is a small signal, junction-isolated, low-power Shottky diode manufactured by several brands including Motorola, Siemens, Ricoh, and Others. It is composed of a single transistor with a power rating of 300 mW. The construction of the device is based on the planar junction-isolated process. The device has a maximum operating voltage of 25 volts and a maximum collector current of 200 mA.
The 2N5086TA is used in various types of applications ranging from amplifier circuits, switching circuits, electrical protection circuits, and automotive circuits. It is also used in audio applications such as audio amplifiers, receivers, and sound systems. The device provides excellent noise immunity, including low leakage current, tight coupling, and low gain drift. Other features of the device include low switching jitter, high withstand voltage, and low power dissipation. It is suitable for a wide variety of applications.
The 2N5086TA works on the principle of collector-base junction isolated process. As current passes through the collector-base junction, a voltage drop is created due to a decrease in the resistance of the junction. When the voltage of the collector base junction is sufficient, it triggers the P-N junction, thereby causing current to flow from the collector to the base. This current is further amplified by the collector amplifier or switch. The current then passes through the collector to the emitter, which produces a larger current gain, resulting in the desired amplified signal.
In addition to its low power consumption, the 2N5086TA also offers excellent switching performance. The device has a high switching frequency and can handle a wide range of voltages and currents without overloading. It also provides excellent noise immunity and power efficiency, making it suitable for signal processing and switching applications. Furthermore, its lightweight design makes it ideal for portable and laptop applications.
The 2N5086TA is a reliable and efficient device that is suitable for many applications. Its simple structure and low power consumption make it an ideal choice for a wide range of switching and current amplification needs. The device offers excellent performance while providing good noise immunity and excellent switching characteristics. It is also easy to install and can be used in a variety of applications, making it a great choice for commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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2N5086TA Datasheet/PDF