| Allicdata Part #: | 2N5087TAR-ND |
| Manufacturer Part#: |
2N5087TAR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 0.1A TO-92 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW... |
| DataSheet: | 2N5087TAR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100µA, 5V |
| Power - Max: | 625mW |
| Frequency - Transition: | 40MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | 2N5087 |
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Introduction
The 2N5087TAR is a high voltage, large current NPN transistor designed for use in a variety of power applications. It is a high-volume, cost-effective transistor well suited for a variety of general-purpose applications such as amplification and switching. This article covers the application field and working principle of 2N5087TAR.
Application Field of 2N5087TAR
2N5087TAR is a popular NPN transistor capable of providing high-power amplification and control, and can be used in a variety of fields such as am/fm radios, telephones, instrumentation, and industrial applications. It is well suited for use as a power amplifier in audio systems, switching power inputs and outputs in electrical instruments, and high-power switching in DC motors. In addition, the 2N5087TAR is also suitable for use in switching relays and transistors in telecom systems. As with other transistors, the 2N5087TAR may require additional components, such as resistors, to operate correctly. It is important to remember that this transistor should never be directly connected to a power source.
Working Principle of 2N5087TAR
The 2N5087TAR is a three-terminal, NPN type transistor. It consists of three layers. The base layer is composed of silicon, while the two other layers are composed of boron and arsenic, respectively. In its operation, a voltage is applied to the base layer, which creates a current flow between the emitter and collector layers. The emitter layer, which is connected to the collector layer by a PN junction, controls the amount of current flowing between them. When the voltage applied to the emitter is greater than the voltage applied to the base, the transistor is turned “on”, turning the current flow “on”. Conversely, when the voltage applied to the base is greater than the voltage applied to the emitter, the current flow is turned “off”. The amount of current flowing between the emitter and collector layers is controlled by the amount of voltage applied to the base layer.
Conclusion
The 2N5087TAR is a high-voltage, large-current NPN transistor designed for a variety of power applications. Its application field covers audio systems, instruments, and telecom systems. It works by utilizing a voltage applied to the base layer, which initiates current flow between emitter and collector layers. This causes the current flow between the emitter and collector layers to be turned “on” or “off” based on the voltage applied to the base. The 2N5087TAR is a cost-effective, high-volume transistor well suited for general-purpose applications.
The specific data is subject to PDF, and the above content is for reference
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2N5087TAR Datasheet/PDF