2N5088TF Allicdata Electronics

2N5088TF Discrete Semiconductor Products

Allicdata Part #:

2N5088TFTR-ND

Manufacturer Part#:

2N5088TF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 50MHz 625mW...
DataSheet: 2N5088TF datasheet2N5088TF Datasheet/PDF
Quantity: 4000
2000 +: $ 0.02434
Stock 4000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5088
Description

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The 2N5088TF is an NPN silicon Epitaxial transistor designed for high-speed switching and amplifier applications. It is a high-power, low-noise, single-transistor device with high gain and low saturation voltage. With a common emitter, the 2N5088TF has a voltage gain of more than 20 and an operating frequency of up to 150 MHz. The device features a low collector-emitter saturation voltage of 2.5 V and a maximum power dissipation of 5 W.

The 2N5088TF is a perfect choice for audio applications, amplifier circuits, and high-power switching applications. It is also highly suitable for circuits involving the conversion of a signal in terms of current, voltage, or any other form. Its high power dissipation, low noise figure, and high gain make it an excellent choice for a wide range of circuits.

The working principle of the 2N5088TF is based on the current-voltage relationship of a transistor. When a voltage is applied across its base-emitter terminals, a current flows through the transistor, which is proportional to the voltage applied to it. As the current through the transistor increases, the voltage between the collector and emitter decreases, causing the transistor to become saturated. The transistor is then said to be in the \'active region\'. In this state, no current can flow through the transistor, allowing it to be used as a switch.

The 2N5088TF is a popular device for applications requiring high-speed switching or amplification. Its high-power dissipation and low maximum voltage drop make it ideal for circuits involving the conversion of a signal in terms of voltage, current, or any other form. The device can also be used as a switch in applications requiring significant electrical loads. In addition, the 2N5088TF\'s low noise figure makes it an excellent choice for audio applications and amplifier circuits.

The 2N5088TF is a reliable and versatile device that is suitable for a wide variety of applications. Its use allows designers to significantly reduce the power consumption of their designs and improve their performance. Consumers can rest assured knowing that the 2N5088TF is a reliable choice for their electronics needs.

The specific data is subject to PDF, and the above content is for reference

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