2N5458_D26Z Allicdata Electronics
Allicdata Part #:

2N5458_D26Z-ND

Manufacturer Part#:

2N5458_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 25V 625MW TO92
More Detail: JFET N-Channel 25V 625mW Through Hole TO-92-3
DataSheet: 2N5458_D26Z datasheet2N5458_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5458
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are one of the most fundamental and essential components found in many electronics circuits. They are used as switches, amplifiers, diodes, and other applications. The 2N5458_D26Z is a type of Junction Field Effect Transistor (JFET) and is used for a variety of electronic applications. This article will explain the application field and working principle of 2N5458_D26Z.

JFETs, as their name implies, are a type of transistor that utilizes a “junction” between two regions. This junction is created by connecting the base and collector leads together, creating a p-n junction. The resulting curved depletion region provides the basis for the device’s operation. The negative bias applied to the gate terminal causes the depletion region to narrow, which reduces the current flow between the source and drain terminals. This type of transistor is highly versatile and can be used in various electronic circuits.

The 2N5458_D26Z is a type of JFET designed for low-frequency, low-noise, and low-power applications. It is typically used as an amplifier, oscillator, mixer, or switch in audio or RF circuit designs. It is also commonly used in signal conditioning and impedance matching circuits. The device has a very low noise figure, which makes it ideal for signal processing applications. The device has a maximum DC current rating of 3A, with a maximum peak current rating of 8A.

In terms of its working principle, a JFET is simply a voltage-controlled device. The gate-to-source voltage causes the depletion region to narrow, which limits the amount of current allowed through the channel. This mechanism produces a linear current versus voltage relationship, which is highly desirable in many applications. In addition, the 2N5458_D26Z has a low output impedance, which makes it well suited for amplifying, switching, and mixing signals.

The 2N5458_D26Z is an excellent choice for applications requiring high input impedance, low noise, and low-power consumption. Its main advantage is its high input impedance, which allows it to process signals with low noise. Additionally, its low-power consumption and low-noise figure make it ideal for a variety of audio, RF, and signal conditioning applications. Therefore, the 2N5458_D26Z can be used in numerous applications where low-noise and low-power consumption are required.

In conclusion, the 2N5458_D26Z is a type of JFET that is highly versatile and suitable for a variety of low-frequency, low-noise, and low-power applications. It has a high input impedance, low output impedance, and low-noise figure. The device is commonly used as an amplifier, oscillator, mixer, or switch in audio or RF circuits. Therefore, it is an excellent choice for applications requiring high input impedance, low noise, and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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