2N5401TA Allicdata Electronics
Allicdata Part #:

2N5401TA-ND

Manufacturer Part#:

2N5401TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 150V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor PNP 150V 600mA 400MHz 625...
DataSheet: 2N5401TA datasheet2N5401TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5401
Description

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The 2N5401TA is a medium-power general-purpose NPN bipolar junction transistor (BJT) commonly used for a wide variety of applications. It belongs to the Single Transistors - Bipolar (BJT) family. This transistor can handle up to 300mA of current and can operate at a voltage up to 65V. The 2N5401TA is widely used in many general-purpose circuits such as amplifiers, switches, and signal conditioning. It is also widely used in switching and power applications, like relay drivers and light dimmer circuits.

The 2N5401TA provides a variety of features and benefits to the user, including fast switching and high gain performance. The transistor is constructed to withstand high temperatures and is highly reliable, making it suitable for many high-temperature applications. This transistor is also commonly used as part of an amplifier circuit and can be used in both low- and high-power applications. Its low saturation voltage and high voltage gain ensure the best performance for any given application.

The 2N5401TA is an NPN type of BJT and its working principle revolves around the use of electrons and holes. The transistor has three terminals, labelled Collector (C), Base (B) and Emitter (E). During operation, the Base-Emitter junction acts as a voltage-controlled switch and the Base-Collector junction acts as a current-controlled switch. These two junctions work together to control the flow of electrons between the Collector and the Emitter, thereby controlling the current flow through the transistor.

When a positive voltage is applied to the Base terminal, it forward biases the Base-Emitter junction, and allows electrons to be injected from the Base into the Emitter. These electrons are then collected by the Collector and current flows from the Collector to the Emitter. Simultaneously, the Base-Collector junction is forward biased and a current flow through the Collector is established. This current flow provides the gain for the transistor.

When the Base voltage is reduced to zero or below, it reverse biases the Base-Emitter junction, and the number of electrons injected into the Emitter is significantly reduced. This results in the current flow through the Collector reducing to zero and consequently, the gain of the transistor also reduces. This is what makes the 2N5401TA so versatile and useful in a variety of applications.

The 2N5401TA can be used in a variety of applications such as amplifiers, switches, and signal conditioning. It can also be used in switching applications, like relay drivers and light dimmer circuits. The 2N5401TA is highly reliable and suitable for many high-temperature applications. Its low saturation voltage and high voltage gain make it an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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