2N5460_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Voltage - Breakdown (V(BR)GSS):	40V
Current - Drain (Idss) @ Vds (Vgs=0):	1mA @ 15V
Voltage - Cutoff (VGS off) @ Id:	750mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds:	7pF @ 15V
Power - Max:	350mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5460

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2N5460_D27Z Application Field and Working PrincipleThe 2N5460_D27Z is an N-channel junction field-effect transistor (JFET) manufactured by NXP Semiconductor. It is one of the few products within the JFET family that is specifically designed for audio and low-noise signal processing applications. This device is suitable for use in amplifier and pre-amplifier stages of audio equipment, frequency control circuits, radio-frequency (RF) signal applications, and other signal circuits.The 2N5460_D27Z JFET has a maximum operating drain current of 0.5A, with a maximum peak drain current of 0.7A. The drain-source breakdown voltage (Vds) is rated at 30V, and the maximum operation temperature range is –55°C to +105°C. The JFET also has a low input capacitance of 4.9pF and a high gain-bandwidth product of 10 MHz. These properties make the 2N5460_D27Z an ideal choice for low noise, high-frequency signal processing applications.The 2N5460_D27Z works on the same principles as other JFETs; that is, it relies upon a small electric charge to alter the behaviour of the transistor. The small electric charge is applied to the gate area of the transistor, which affects the resistance between the source and drain terminals. When a positive gate voltage is applied (that is, more positive than the source voltage), the resistance between the source and drain terminals decreases. This is known as an "enhancement mode JFET". Alternatively, when a negative gate voltage is applied (that is, more negative than the source voltage), the resistance between the source and drain terminals increases. This is known as a "depletion mode JFET".The 2N5460_D27Z JFET is capable of providing higher gain and sharper cutoff frequencies in audio and high-frequency signal processing applications. This makes the device an ideal choice for these kinds of applications. The JFET also has a higher power gain and higher output gain than other types of transistors, making it a quick and easy choice for boosting signal levels. In addition, JFETs are also highly resistant to noise and other interferences, making them perfect for low-noise signal processing applications.Overall, the 2N5460_D27Z JFET is an excellent choice for audio and low-noise signal processing applications. It provides a high input impedance, low input capacitance, and high gain-bandwidth product, making it ideal for boosting signal levels and providing sharp cutoff frequencies. The device is also highly resistant to noise and other interferences, making it the ideal choice for low-noise applications. Finally, the JFET is easy to integrate into existing circuit designs, making it a versatile and reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description