Allicdata Part #: | 2N5459_D74Z-ND |
Manufacturer Part#: |
2N5459_D74Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 625MW TO92 |
More Detail: | JFET N-Channel 25V 625mW Through Hole TO-92-3 |
DataSheet: | 2N5459_D74Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 4mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 2V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5459 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2N5459_D74Z is a P-channel JFET transistor that is widely used in many applications, including amplifiers, DC-DC converters, and analog signal processing circuits. It is also employed in automotive and marine electronics, agriculture, and material handling technologies. It is a versatile device that is capable of a broad range of applications.
The 2N5459_D74Z contains a P-channel junction field-effect transistor (JFET) that can be used to create an electrical connection between two or more components in a circuit. This type of transistor is composed of two n-type semiconductor regions that are separated by an insulating barrier, known as the depletion layer. This type of transistor is characterized by its strong isolation capability between the source and drain regions, and it also has a very low threshold voltage.
The working principle of the 2N5459_D74Z is based on the principle of controlling the flow of current between two terminals, the source (S) and the drain (D). This is accomplished by applying a voltage (VGS) to the gate (G) of the device. This voltage causes an electric field that is created in the depletion layer between the two n-type semiconductor regions. This electric field then controls the number of electrons that flow between the source and the drain.
The 2N5459_D74Z can be used to amplify signals and as part of voltage regulators. This device is preferred due to its low noise characteristics and low voltage needed for its operation. Additionally, a JFET can be used in analog circuits to modify signals with low distortion and to provide a low-noise interface between a high-frequency amplifier and low-frequency circuits.
This device is also commonly used in DC-DC converters and other circuits that require precise control of current flow. The 2N5459_D74Z can be used to boost the voltage from a source to a load, or to reduce the supply voltage before being applied to the load. Additionally, these types of transistors can also be employed in switching circuits, as well as in various types of voltage regulators.
The 2N5459_D74Z is an excellent choice for high-performance applications that require precise control of current flow and low distortion. This device is popular in automotive and marine electronics, agriculture, and material handling technologies due to its low noise characteristics, low input voltage, and its excellent isolation capabilities. Additionally, this versatile device is a popular choice for voltage regulation, signal amplification, and switching.
The specific data is subject to PDF, and the above content is for reference
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