Allicdata Part #: | 2N5461OS-ND |
Manufacturer Part#: |
2N5461 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 40V 0.35W TO92 |
More Detail: | JFET P-Channel 40V 350mW Through Hole TO-92-3 |
DataSheet: | 2N5461 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 135°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5461 |
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The 2N5461 JFET is an N-channel Junction Gate Field-Effect Transistor (JFET) used in various applications requiring transistor switching and/or amplification. The 2N5461 is capable of sensing input signals down to low MICROamperes, and has low noise and high reliability characteristics. Thus, the 2N5461 is often used in low-power switching applications or in small signal circuits.
Application Field
The 2N5461 can be found in a variety of low-power switching applications and small signal circuits. Some of the most common applications for the 2N5461 include audio amplification, device preamplification, amplifier stages, and active filters. The 2N5461 can also be used in battery-powered devices, as it has a very low gate leakage current and minimal current consumption when in active mode. Additionally, the 2N5461 can be used for signal isolation and multiplexing applications.
Working Principle
The 2N5461 works by voltage-controlled current flow. It consists of a thin layer of silicon or germanium between source and drain regions, in which a controlled amount of current carried by the channel is allowed to flow through. JFETs are considered “Current sources” because their output current is determined by the input voltage. The current in the channel is proportional to the voltage difference between the gate and the source.
The 2N5461 is considered a depletion-type JFET because it has a negative gate voltage to turn on and requires positive gate voltage to turn off. A positive gate voltage is applied to the 2N5461, which causes the drain current to decrease. The drain current is actually a measure of the resistance between the drain and the source. When the gate potential becomes more negative, the drain current increases.
The 2N5461 operates in an inverse-gated configuration, which means that the drain current is controlled by the gate voltage. Thus, when the gate voltage is higher than the source voltage, a positive voltage is applied to the gate, resulting in a reduction in the drain current. Conversely, when the gate voltage is lower than the source voltage, the gate voltage will provide a negative voltage, resulting in an increase in the drain current.
The 2N5461 JFET can be used in low-noise amplifier stages, as it has an exceptionally small input capacitance. This makes it ideal for use in applications where low-noise performance is essential. Furthermore, due to its low gate capacitor requirement, the 2N5461 requires very low gate currents and therefore is an excellent choice for battery-powered devices and other noise-sensitive applications.
Conclusion
The 2N5461 JFET is a versatile device capable of providing low-power switching and noise-sensitive small signal amplification. It can be used in a variety of applications, including audio amplification, device preamplification, amplifier stages, active filters, battery-powered devices, signal isolation, and multiplexing. Its main advantage over other JFETs is its low gate leakage current, minimal current consumption when operated, and exceptionally small input capacitance.
The specific data is subject to PDF, and the above content is for reference
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2N5400RLRP | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 120V 0.6A TO-92... |
2N5400RLRPG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 120V 0.6A TO-92... |
2N5401G | ON Semicondu... | -- | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401RL1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401RL1G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401RLRM | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401RLRMG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401ZL1 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
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2N5401RLRAG | ON Semicondu... | -- | 1000 | TRANS PNP 150V 0.6A TO92B... |
2N5401TA | ON Semicondu... | -- | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401CTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401CYTA | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401NLBU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401TF | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401TFR | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5400_D75Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 120V 0.6A TO-92... |
2N5400RA | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 120V 0.6A TO-92... |
2N5401TAR | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401_D10Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
2N5401_D28Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
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2N5401_J05Z | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 150V 0.6A TO-92... |
CP736V-2N5401-CT | Central Semi... | 0.0 $ | 1000 | TRANS PNP 150V 600MA CHIP... |
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2N5460 | ON Semicondu... | 0.0 $ | 1000 | JFET P-CH 40V 0.35W TO92J... |
2N5461 | ON Semicondu... | -- | 1000 | JFET P-CH 40V 0.35W TO92J... |
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