
Allicdata Part #: | 2N5432-2-ND |
Manufacturer Part#: |
2N5432-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 25V 0.3W TO-52 |
More Detail: | JFET N-Channel 25V 300mW Through Hole TO-206AC (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 150mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 4V @ 3nA |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 0V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AC, TO-52-3 Metal Can |
Supplier Device Package: | TO-206AC (TO-52) |
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The 2N5432-2 is a Junction Field-Effect Transistor (JFET), which is a three-terminal semiconductor device that utilizes a semiconductor junction to control current. It is used for a variety of applications where a controlled current is needed, such as voltage regulation, signal conditioning, pilot control, and other functions. This article will discuss the application fields and working principles of the 2N5432-2.
The 2N5432-2 has a high input impedance, which means that it is ideal for applications that need to be isolated from the load. It has a low capacitance and a wide operating range. This makes it useful for a variety of functions in electronics, such as filtering and switching. Additionally, the 2N5432-2 can be used for voltage regulators, high-frequency amplifiers, and power control circuits.
The most common application of the 2N5432-2 is for low-noise amplifier (LNA) circuits. These circuits require a transistor with high input impedance, low capacitance, and high gain. The 2N5432-2 meets all of these requirements, making it the perfect choice for this application. Additionally, the 2N5432-2 has low power consumption and is available in a wide range of packages, making it suitable for any type of circuit design.
The working principle of the 2N5432-2 is based upon the PN junction FET. This type of transistor consists of a heavily-doped N-type semiconductor layer between two P-type layers. Depending on the type of FET, the P and N channel regions can be reversed. When operating, the FET will act as a voltage-controlled resistance. This means that the resistance of the device will vary depending on the applied gate voltage.
The 2N5432-2 has a number of features that make it an ideal choice for a variety of applications. It is designed to be easily integrated into circuit designs and is highly reliable. Additionally, it has extremely low leakage currents and is available in a variety of packages. This makes it a versatile device for many uses.
The 2N5432-2 is a well-known and popular transistor for a variety of applications. Its wide operating range, low power consumption, and high input impedance make it ideal for use in low-noise amplifiers, voltage regulators, and power control circuits. Additionally, its PN junction FET structure provides excellent performance and reliability in all types of circuits. With its versatile design and reliable operation, the 2N5432-2 is a great option for many applications.
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