2N5401-AP Allicdata Electronics
Allicdata Part #:

2N5401-AP-ND

Manufacturer Part#:

2N5401-AP

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 150V TO92
More Detail: Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 1.5...
DataSheet: 2N5401-AP datasheet2N5401-AP Datasheet/PDF
Quantity: 1000
20000 +: $ 0.04657
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 1.5W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Description

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A 2N5401-AP transistor is a commonly-used device in various applications that involve discrete circuits. This type of transistor is a NPN-type bipolar junction transistor (BJT) which falls under the category of single transistors, and they are usually used in a variety of audio, amplifying and signal-processing applications.

The high-performance 2N5401-AP transistor is designed in a TO-92 package, which is the most common type of small plastic transistor housing used in conventional, dual-transistor circuits such as amplifying and switching circuits. It is also one of the most commonly-used discrete semiconductor devices for low-power amplifiers.

The 2N5401-AP is composed of a semiconductor material with an impurity to control its electrical properties. This type of transistor is made up of three layers of a different type of semiconductors, sandwiched between two electrodes which act as the base and the collector, respectively. The middle layer is the emitter, which is the output of the transistor.

The working principle of the 2N5401-AP transistor is similar to that of any other NPN-type transistor. When the input signal applied at the base of the transistor exceeds a minimum threshold voltage at its emitter, the transistor starts to conduct. This is due to the fact that there is a small amount of current flowing between the collector and the emitter. As the base voltage increases, the current flowing between the collector and the emitter also increases. Thus, a voltage-controlled current gain can be achieved.

The 2N5401-AP transistor can be used in various applications, such as amplifying and switching circuits. They are also used in audio and signal-processing applications, as well as for powering distributed LED lighting. Additionally, these transistors are used in sensor arrays and as drivers for solenoids and relays. Furthermore, they are commonly used in various consumer devices such as waterproof headphones and various other consumer audio and video products.

To sum up, the 2N5401-AP transistor is an NPN-type bipolar junction transistor which is mainly used in various audio, amplifying and signal-processing applications. It is composed of three layers of semiconductors which are sandwiched between two electrodes, and its working principle is based on the fact that there is a small amount of current flowing between the collector and the emitter. Furthermore, this type of transistor is used in various consumer products such as waterproof headphones and other consumer audio and video products.

The specific data is subject to PDF, and the above content is for reference

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