Allicdata Part #: | 2N5401,412-ND |
Manufacturer Part#: |
2N5401,412 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 150V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 630... |
DataSheet: | 2N5401,412 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
Power - Max: | 630mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5401 |
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The 2N5401 and 412 are both Bipolar Junction Transistors (BJT) which are commonly used in electronics and industry. They are one of the most popular and widely used type of BJT due to their robustness and low cost. They are available in both through-hole and surface-mount packages and can be used in a wide range of applications. The purpose of this article is to discuss the application fields and working principles of these two transistors.
2N5401 and 412 are both NPN transistors, which means they have two base terminals and one collector and one emitter terminals. They are mainly used for switching applications, for example, relay and logic circuits. Additionally, they are commonly used in amplifying audio signals and output stages in power management systems. The 2N5401 has a maximum collector current of 0.8 Amps and a maximum collector-emitter voltage of 60 Volts, while the 412 has a maximum collector current of 80 mA and a maximum collector-emitter voltage of 40 Volts.
The working principle of both transistors is based on the fact that, when a voltage is applied to the base terminal, it attracts electrons in the base region and creates a region of low resistance. This, in turn, allows current to flow from the collector to the emitter. The amount of current that flows through the transistor is directly dependent on the amount of voltage applied to the base. The current gain of the transistor, known as the hFE (common-emitter current gain) is determined by the ratio of the collector current to the base current; hFE = Ic/Ib. This gain is determined by the type of transistor, temperature, and the amount of current applied to the base.
The 2N5401 and 412 are both robust and durable transistors which can be used in a wide range of electronic and electrical applications. They are popular for their cost effectiveness and can be used in both through-hole and surface-mount packages. The 2N5401 has a higher current rating than the 412 and is more suitable for high power applications, whilst the 412 is suitable for low power applications. Their working principle is based on the application of a voltage to the base terminal, which causes current to flow through the collector-emitter junction.
These transistors are used in everyday applications and can be found in all types of electrical and electronics applications. They are widely used in amplifiers and audio systems, power management, logic circuits and motor control systems. They are widely available and come in both surface mount and through-hole packages. The 2N5401 and 412 are both good options for cost-effective and reliable switching and amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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