2N5954

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5954 is a type of bipolar junction transistor (BJT) commonly used in high power applications. It is designed for use in a wide range of applications and is capable of operating at high power levels. The 2N5954 consists of three terminals – base, collector, and emitter. It is constructed using a metal-oxide-semiconductor (MOS) structure, with three heavily doped N-type MOS regions, which are separated by thin layers of metal. This arrangement gives the transistor its high current handling capacity.

The 2N5954 application field primarily involves: switching applications, high voltage and high power audio amplifiers and applications that require heavy current handling. In these applications, it can be used to amplify signals or control the flow of current from one circuit to another. Its relatively low noise levels, high current handling capacity, and high voltage breakdown ratings make it ideal for these applications.

The 2N5954 working principle is based on the MOS structure. Since the transistor consists of three heavily doped N-type MOS regions, the transistor can be thought of as having three "gates", the base, collector and emitter. The current flow through the transistor is therefore regulated primarily by controlling the current that flows between the base and collector. When a small current flows from the base to the collector, a large current will flow from the collector to the emitter through the transistor, which is known as the "forward biased" condition. Conversely, when a large current flows from the base to the collector, a small current will flow from the collector to the emitter through the transistor, which is known as the "reverse biased" condition.

The 2N5954 is a type of bipolar junction transistor that is suitable for use in a wide range of applications. Its construction using a metal-oxide-semiconductor (MOS) structure and three heavily doped N-type MOS regions gives the transistor its high current handling capacity and enables it to be used in applications such as switching, high voltage and high power audio amplifiers and applications that require heavy current handling. The functioning of the 2N5954 is based on the control of current flow between the base and collector, which is regulated by the voltage level on the base. With this arrangement, the transistor is capable of switching high current loads and amplifying high voltage signals with relatively low noise levels.

The specific data is subject to PDF, and the above content is for reference