2N5953_J35Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 2N5953_J35Z is a particular device categorized as a radio-frequency (RF) types of Field Effect Transistors (FETs) or Metal Oxide FETs (MOSFETs). This type of device is designed for applications in amplifiers and RF circuits, as well as switching and regulating applications, where it can provide consistent performance and value.

The 2N5953_J35Z is a type of N-Channel enhancement mode MOSFET with an operating voltage of 15 volts and a minimum current gain of 7.0 MHz. It features a medium voltage, low gate charge, and low Rds(on). The device also features fast switching, low on-state resistance, and high efficiency. This makes it suitable for a variety of applications, including RF circuits, power amplifiers, switching, and voltage or current regulating.

The working principle of the 2N5953_J35Z is based on the principle of field effect transistors. The device utilizes a gate terminal to control the flow of current between the source terminal and the drain terminal. Due to the presence of an electric field created by the gate bias voltage, the channel resistance between the source and the drain is modulated, thereby controlling the current flow. This is known as the field effect or MOSFET effect, and is the underlying principle of operation of this device.

The field effect effect occurs when the electric field created by the gate bias voltage modulates the conductivity of the channel between the source and the drain. By modulating this channel resistance, the current flow between the source and the drain is controlled. When the gate bias voltage is increased, the channel resistance decreases, increasing the current flow. Conversely, when the voltage is decreased, the channel resistance increases and the current flow is decreased.

In the context of this 2N5953_J35Z, the field effect principle can be used in RF circuits and power amplifiers, as it can quickly switch and provide high efficiency. The device also features low gate charge and low Rds(on), making it a very efficient device for these types of applications.

The 2N5953_J35Z FET is an ideal device for applications in RF circuits, power amplifiers, and voltage or current regulating. It features an operating voltage of 15 volts, a minimum current gain of 7.0 MHz, and low gate charge and low Rds(on), making it highly suitable for these types of applications. The device utilizes the field effect or MOSFET effect principle to modulate the flow of current between the source and the drain, making it an ideal device for efficient switching and modulation.

The specific data is subject to PDF, and the above content is for reference