2N5952

2N5952 is an N-channel, enhancement-mode Field-Effect Transistor (FET) used in radio frequency (RF) applications. It is a device used to amplify or switch signals by varying the width of a channel of silicon between a source terminal and a drain terminal. The transistor works on the basis of FET, its inherent design can allow fast switching properties with high input level impedance and low output level impedance.The 2N5952 transistor is characterized by a small signal NFET. This part is typically used in Class B or Class AB amplifier stages, bandpass or notch filters, low noise amplifiers, modulators and allows low power consumption and large gain linearity. It also provides excellent large signal performance and operates over a wide range of frequencies up to gigahertz. The 2N5952 transistor has low gate leakage characteristics and low output capacitance which makes it ideal for ultra-high frequency application.The transistors have a number of applications in RF circuits. It can be used in amplifiers, oscillators, mixers and as a driver for switching applications. It can be used for RF amplifiers and driver stages, low noise amplifiers, and applications where high local oscillator power, linearity performance is required. Also, the 2N5952 can be used in modulators, mixers and detectors, oscillators, amplifiers, vacuum tube amplifiers and amplifiers with switches.The 2N5952 is a general purpose RF FET and operates on the principle of field effect transistor. It is a three terminal device consisting of a source, gate and drain. When the gate is biased or biased with a signal, then the drain source voltage modulates the channel formed between source and drain and thus produces current between drain and source. It works on sustained channel inversion principle and its gain is determined by the amount of channel inversion generated by the applied bias voltage.The 2N5952 transistor is used in many RF applications. Its usage in RF circuits provides excellent performance. Its low power operation, low capacitance and high speed switching properties make it suitable for many electronic devices. Its low gate leakage characteristic helps it to maintain low power consumption, high linearity and high frequency operation.

2N5962_D74Z	ON Semicondu...	0.0 $	1000	TRANS NPN 45V 0.1A TO-92B...
2N5953	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 5MA TO92RF ...
2N5954	Microsemi Co...	20.95 $	1000	PNP POWER TRANSISTOR SILI...
2N5952_J35Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 8MA TO92RF ...
2N5963	Central Semi...	0.1 $	1000	THROUGH-HOLE TRANSISTOR-S...
2N5950_J18Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 15MA TO92RF...
2N5962	Central Semi...	--	975	THROUGH-HOLE TRANSISTOR-S...
2N5961_D27Z	ON Semicondu...	0.0 $	1000	TRANS NPN 60V 0.1A TO-92B...
2N5952_D74Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 8MA TO92RF ...
2N5950	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 15MA TO92RF...
2N5951_D27Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 13MA TO92RF...
2N5912	Central Semi...	0.0 $	1000	TRANSISTOR DUAL TO78Bipol...
2N5951	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 13MA TO92RF...
2N5956	Microsemi Co...	18.06 $	1000	PNP POWER TRANSISTOR SILI...
2N5962_D26Z	ON Semicondu...	0.0 $	1000	TRANS NPN 45V 0.1A TO-92B...
2N5952	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 8MA TO92RF ...
2N5950_J35Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 15MA TO92RF...
2N5951_J35Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 13MA TO92RF...
2N5952_D75Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 8MA TO92RF ...
2N5953_J35Z	ON Semicondu...	0.0 $	1000	JFET N-CH 30V 5MA TO92RF ...
2N5961	ON Semicondu...	--	1000	TRANS NPN 60V 0.1A TO-92B...