2N5952_J35Z

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The 2N5952_J35Z is a field effect transistor that falls under the broad category of RF (radio frequency) MOSFETs, or metal oxide semiconductor field effect transistors. As a type of transistor, the 2N5952_J35Z can be used to amplify signals in a variety of conditions. More specifically, it is a P-channel enhancement mode logic level MOSFET, with an ability to support frequencies up to 2 GHz.

The 2N5952_J35Z has a drain-source breakdown voltage of 15 V, a maximum drain current of 5 A, and a gate-source voltage range of -2 to -10 V. It has an on-resistance of 95 mΩ maximum, and a package style of molded. With these specifications in mind, it is easy to see why the 2N5952_J35Z is ideally suited for a variety of applications in the fields of radio frequency transmission and reception.

The 2N5952_J35Z can be used to fabricate a number of circuits and components, including amplifiers, oscillators, filters, and switches. When used as an amplifier, the 2N5952_J35Z can effectively increase the strength of a weak signal. In addition, it can be used to selectively control the amplitude and frequency of a signal. Lastly, when used as a switch, the 2N9492_J35Z can be used to route and alter transmission paths, within a variety of circuits.

It is important to understand the working principles behind the 2N5952_J35Z in order to properly utilize it in any given application. As a MOSFET transistor, the 2N5952_J35Z has three main components: the source, the drain, and the gate. The source is the input of the transistor and it is here that the signal is injected into the transistor. A control voltage is then applied to the gate in order to control the flow of current from the source to the drain. This voltage can be varied from -2 to -10 V and the circuit will be “on” at -2 volts and “off” at -10 volts. When a positive voltage is applied to the source relative the gate, electrons are pushed from the source to the drain, resulting in the amplification of the original signal.

In summary, the 2N5952_J35Z is an enhancement-mode transistor capable of amplifying and controlling signals, with a broad frequency range of up to 2 GHz. It operates on the principle of the MOSFET, wherein a control voltage is applied to the “gate” in order to control the flow of current from the “source” to the “drain.” This makes it ideally suited for a variety of RF applications, such as amplifiers, oscillators, filters, and switches.

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