2N5951_J35Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	1kHz
Gain:	--
Voltage - Test:	15V
Current Rating:	13mA
Noise Figure:	2dB
Power - Output:	--
Voltage - Rated:	30V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5951

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Transistors are used to amplify signals and provide switching functions in electronic circuits. Among these transistors, the field-effect transistor (FET) is one of the most commonly used semiconductor devices. There are a variety of types of FETs, including junction-gate (JFET), MOSFET, high power pulsed FET, high voltage FET, RF FET and their respective application fields. The 2N5951_J35Z is one of the RF FETs.The 2N5951_J35Z FET is a N-Channel, 10 milliwatt (mW) FET designed for high frequency, high speed switching and amplification. It features an operating frequency range of 30MHz to 4GHz and a relatively low RDS (on), which makes it suitable for high-frequency, high-power applications. Moreover, the FET has good power dissipation and a low bias voltage, which makes it suitable for a wide variety of applications.The working principle of the 2N5951_J35Z FET is based on the theory of the junction FET (JFET). It works by controlling the flow of charge carriers through the two terminals of the transistor. The gate, or control electrode, of the FET is used to control the flow of charge carriers between the two terminals by adjusting the applied electric field. As the gate voltage is increased, the electric field increases, resulting in more charge carriers travelling through the device. Conversely, as the gate voltage is decreased, the electric field decreases and fewer charge carriers travel through the device.The 2N5951_J35Z FET can be used in a variety of high-frequency and high-power applications. It can be used in RF amplifiers, receivers, and transmitters and in switch mode power supplies. In particular, it is well-suited for use in wireless communication systems such as cellular base stations, Wi-Fi routers, wireless sensor networks, and Bluetooth systems.In summary, the 2N5951_J35Z FET is a N-channel, 10 milliwatt FET designed for high frequency, high speed switching and amplification. It has an operating frequency range of 30MHz to 4GHz and a relatively low RDS (on), and is suitable for a wide range of applications. Its working principle is based on the JFET theory, and it can be used in a variety of high-frequency and high-power applications.

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