2N5951_D27Z

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The 2N5951_D27Z is a silicon N-Channel Junction Field Effect Transistor, commonly known as a JFET, designed for radio frequency (RF) high-voltage applications. Typical high-voltage applications for the 2N5951_D27Z include RF oscillators, mixers, RF amplifiers and RF switches. The basic principle of the JFET is a three-terminal, solid-state device with a gate electrode, source and drain electrodes. The gate electrode is insulated from the other two terminals and provides a voltage control to the conduction of carriers between the source and drain electrodes. The 2N5951_D27Z is a high-voltage and high-frequency JFET, having an operating voltage range of 700 volts with a maximum breakdown voltage of 1000 volts. Its low-noise performance comes from the junction and gate-to-channel capacitance. Its highest frequency of oscillation is stratospheric at 7.5 GHz, capable of handling frequencies up to 3.2 GHz. Its low input noise results in a low noise figure of 8 dB, making it optimal for low-noise amplifier applications. The gate-to-channel capacitance is minimised so that the gate electrode remains isolated from the source and drain. Furthermore, the drain-to-gate capacitance has been designed to enable high input impedance, which is ideal for RF amplifier applications. The drain conductance of the 2N5951_D27Z is stated to be between 10.5 mS and 16 mS, with a minimum breakdown voltage of 8V, making it optimal for RF power amplifiers. The drain current switching time for the device is minimal, which further increases its efficiency in its RF applications. The input and output impedances of the device remain low so it is also capable of low-impedance switches. In conclusion, the 2N5951_D27Z is an ideal JFET for many high-voltage and high-frequency RF applications. Its low gate-to-channel capacitance minimises the drain leakage, enabling high-voltage operations up to 1000 volts, up to 7.5 GHz. Furthermore, its low input noise results in an optimal noise figure of 8 dB, making it perfect for low-noise amplifier applications. Its high efficiency ensures that it is capable of high-speed switching, making it an ideal choice for RF power amplifiers and low-impedance switches.

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