2N5950_J35Z

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The 2N5950_J35Z is an N-channel depletion mode radio frequency field effect transistor, commonly referred to as a RF FET. It is widely used for RF amplification for amplifying radio signals at high frequencies. These RF FETs are typically used in circuits that require high power gain, or in other words, a large increase in power from the input to the output.

Overview

The 2N5950_J35Z is a silicon N-channel depletion mode RF FET with a minimum amplification rate of 31 dB. It is designed especially for high wattage applications, with a maximum drain current of 4 A and a maximum drain power of 85 W. This particular model also features a 20-volt operation, with a gate to source voltage rating of -20 V to +20 V. The operation temperature range is -55°C to +175°C, with a channel load capacitance of 1.5 pF maximum.

Design

The 2N5950_J35Z is constructed with a Gallium Arsenide semiconductor material, making it a robust and reliable device. It is available in three unique packages: 2 pin SOT-25, 4 pin TO-225 and 6 pin TO-3. It has an operating frequency range from 5 MHz to 6 GHz with a standing wave ratio of 1.224 W max, and a noise figure of 9.3 dB max. The 2N5950_J35Z also features 16 dBm max power gain, and a maximum breakdown voltage of 100 V, making it a highly efficient device.

Applications

The 2N5950_J35Z is commonly used for RF amplifications, such as high wattage amplifiers, mixing stations, linear applications, and other power handling needs. It is also often used in the manufacturing of wireless systems, cellular networks, telephones, and in other high frequency applications. Furthermore, its high power gain, low noise figure and broad operating frequency range make it especially suitable for radio systems and for use in radio repeaters and radio receivers.

Working Principle

The 2N5950_J35Z operates with an N-channel depletion mode. When the gate to source voltage is applied, the depletion mode turns on, allowing current to move from the drain to the source. This is known as the “on-state” of the device. When the gate to source voltage drops to zero, the device goes into an “off-state” and the current flow is reversed. This results in a high amplification rate since the current flow is reversed very quickly.

Conclusion

The 2N5950_J35Z RF FET is an ideal choice for high wattage applications such as wireless systems and radio systems. Its high power gain, low noise figure and broad operating frequency range make it an ideal choice for many applications. Its depletion mode structure also provides a high amplification rate, making it an efficient and reliable device for use in many different applications.

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