2N5961_D27Z Allicdata Electronics
Allicdata Part #:

2N5961_D27Z-ND

Manufacturer Part#:

2N5961_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 100mA 625mW Thro...
DataSheet: 2N5961_D27Z datasheet2N5961_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5961
Description

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2N5961_D27Z is a kind of bipolar junction transistor (BJT). It comes in medium power and voltage. Specifically, it has a maximum collector power dissipation of 600 mW, a maximum collector-base voltage of 40V, and a maximum collector-emitter voltage of 40V.

BJTs are one type of semiconductor device. It is made up of three layers of semiconductors which form the two junctions, either the collector-base or the emitter-base junction. It conducts current in both directions. The current gain is determined by the ratio of collector current to the base current, which is referred to as the h-parameter.

2N5961_D27Z application field mainly include digital processing, power devices, logic circuits, amplifiers, as well as switching applications. It can be used as an oscillator, amplifier, or digital switch. The output frequency of 2N5961_D27Z can be varied by adjusting the base-emitter voltage. The gain of 2N5961_D27Z is mainly dependent on the frequency of application.

The working principle of the 2N5961_D27 consists of two major operations. The first is the controlled saturation of the transistor. This is achieved by controlling the flow of current through the base-emitter junction. As the current increases, the voltage drop across the base-emitter junction decreases, which makes the current had more saturation with less resistance. Secondly, the avalanche breakdown of the transistor is controlled by controlling the flow of current through the collector-base junction. When the applied voltage increases, the current across collectors flow increases. This increases the chance of the avalanche breakdown, which turns the transistor off.

Overall, the 2N5961_D27Z is a useful transistor and is widely used in digital signal processing, power devices, logic circuits, amplifiers, and switch applications. The key features of this transistor are its low power dissipation, high switching speed and wide range of operating voltage. Thanks to its characteristics, it has great operating performance and is a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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