2N6401

Current - Hold (Ih) (Max):	40mA
Base Part Number:	2N6401
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 125°C
SCR Type:	Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm):	160A @ 60Hz
Current - Off State (Max):	10µA
Series:	--
Current - On State (It (RMS)) (Max):	16A
Current - On State (It (AV)) (Max):	10A
Voltage - On State (Vtm) (Max):	1.7V
Current - Gate Trigger (Igt) (Max):	30mA
Voltage - Gate Trigger (Vgt) (Max):	1.5V
Voltage - Off State:	100V
Part Status:	Obsolete
Packaging:	Bulk

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Thyristors - SCRs

The 2N6401 is a silicon controlled rectifier, commonly known as a SCR. It is a three-terminal power semiconductor device for use as a switch or rectifier in power control circuits. An SCR has two stable states: on and off. It is a four-layer device, comprising of one p-type layer, two n-type layers, and a control electrode known as the gate. A 2N6401 can be turned on by applying a voltage pulse at the gate. It dissipates the current until it is turned off by reapplying the gate pulse or cutting off the anode current.

Application Field of 2N6401

The 2N6401 can be used in a wide variety of applications because of its wide reverse and forward blocking voltage range. The common applications include power regulators, industrial control, AC solid-state switching, uninterruptible power supplies, motor controls, temperature controls, and lighting systems. It can also be used in DC circuits for protection, rectification, and switching applications.

Working Principle

The 2N6401 works in a simple way. When a positive voltage is applied to the gate, current flows through it and into the anode, switching the device on. This allows current to flow from the anode to the cathode and the device is "on". If the current drops below the forward operating current then the device turns off, and no current is allowed to flow through it.The N6401 is a four-layer semiconductor device, meaning it has two p-type layers, two n-type layers, and a control electrode known as the gate. The two p-type layers are the anode and the gate contact, while the two n-type layers are the cathode and the substrate. The anode-cathode voltage is known as the forward breakover voltage, while the gate-cathode voltage is the reverse breakover voltage. When a positive voltage is applied to the gate of the device and the anode-cathode voltage exceeds the forward breakover voltage, a current is allowed to flow from the anode to the cathode, switching the device into conduction. The device can be turned off again by removing the positive voltage from the gate or by reducing the anode-cathode voltage to below the forward breakover voltage. The reverse breakover voltage ensures that the device cannot be turned on by a negative voltage applied to the gate. In summary, the 2N6401 is a common three-terminal power semiconductor device that can allow current to flow through it when a positive voltage is applied to the gate, and can be turned on and off by applying a voltage pulse or by reducing the anode-cathode voltage. It is used in a variety of applications such as power regulators, industrial control, AC solid-state switching, uninterruptible power supplies, motor controls, temperature controls, and lighting systems.

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