2N6428ABU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	25nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100µA, 5V
Power - Max:	625mW
Frequency - Transition:	700MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	2N6428

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2N6428ABU - Introduction

The 2N6428ABU is a single bipolar junction transistor (BJT) from the 2N6428 family of transistors. It is designed for general-purpose applications and has an operating temperature range of -40°C to 100°C. The 2N6428ABU offers high current density, making it an ideal choice for automotive and industrial applications that require a high-speed switch.

2N6428ABU - Applications

The 2N6428ABU is commonly used in a variety of applications including switched-mode power supplies and inverters, audio amplifiers, and as a switching device in motor control circuits. It is also used in high-frequency amplifier circuits and as an ac switch to drive inductive loads. The 2N6428ABU is also a good choice for high-sensitivity circuits due to its low level current gain.

2N6428ABU - Mechanical Outdoor

The 2N6428ABU features an epoxy-sealed SOIC-8 plastic package as well as an isolated metal tab cup which is designed to provide protection against overload conditions. In addition, the 2N6428ABU also features a blistered or hermetic seal to ensure a reliable electrical connection.

2N6428ABU - Electrical Characteristics

The 2N6428ABU has a maximum collector current rating of 100mA and the base-emitter voltage is rated at 6V. The device has a maximum collector-emitter voltage rating of 60V and a minimum breakdown voltage rating of 40V. The 2N6428ABU\'s alternating current capability is also impressive, with a maximum Ic/Ic rating of 200mA.

2N6428ABU - Operating Principle

The 2N6428ABU operates according to the basic principle of a BJT. When current passes through the base-emitter junction of the transistor, it creates an electric field between the emitter and collector. This electric field drives the flow of electrons from the emitter to the collector, creating a closed circuit. The collector also acts as an output port, while the base acts as an input connection.When the base voltage rises above the emitter voltage, the electric field between the emitter and collector will become strong enough to drive more electrons from the emitter to the collector, resulting in the transistor being in a conducting state. If the base voltage falls below the emitter voltage, the electric field between the emitter and collector will be reduced, causing the transistor to be in a non-conducting state. The 2N6428ABU is designed to operate at a frequency of up to 150MHz, making it ideal for high-speed switching operations. The device also exhibits low-level current gain, resulting in higher switching speeds than is typical for general-purpose transistors.

2N6428ABU - Conclusion

The 2N6428ABU is a single bipolar junction transistor (BJT) designed for general-purpose applications. Its combination of high-current density, low-level current gain, and high-frequency capability make it an ideal choice for automotive and industrial applications. The device has a maximum collector current rating of 100mA and a maximum Ic/Ic rating of 200mA, allowing it to handle high-bandwidth applications. In addition, the device also features an epoxy-sealed SOIC-8 plastic package, as well as a blistered or hermetic seal for reliable electrical connections.

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