Allicdata Part #: | 2N6426RLRAG-ND |
Manufacturer Part#: |
2N6426RLRAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 500m... |
DataSheet: | 2N6426RLRAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6426 |
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The 2N6426RLRAG is a type of bipolar junction transistor (BJT) used in many fields ranging from low-power digital circuits and amplifiers to industrial control systems. It has a relatively high voltage gain, good power dissipation and low operating currents, making it suitable for a wide range of applications. In this article, we will discuss the application field and working principle of the 2N6426RLRAG.
Application Field of 2N6426RLRAG
The 2N6426RLRAG is a general-purpose, NPN, silicon BJT often used in audio and other low-power voltage amplification applications due to its relatively high current gain, low operating current and good power dissipation. It is often used for switching with its high input impedance and for current limiting. Additionally, it can be used in industrial applications such as motion control, HVAC, and logic circuit interfacing, thanks to its high voltage gain.
Working Principle of 2N6426RLRAG
The 2N6426RLRAG is made up of three layers of semiconductor material known as the emitter, base and collector. These layers are arranged in a p-n-p junction, where one side of the junction is p-doped and the other side is n-doped. When a voltage is applied to the base terminal of the transistor, the p-n junction between the base and collector terminals become forward-biased and a small current flows from the collector to the base, known as the base current. This base current is amplified to produce a larger current flow from the collector to the emitter, known as the collector current.
The amount of current amplification achieved by the transistor is known as the current gain. The current gain of the 2N6426RLRAG is typically between 60 and 80. This means that for every 1mA of input current, the collector current will be between 60 and 80 times larger, producing an amplified voltage that can be used to control the flow of current in an external circuit.
Furthermore, the 2N6426RLRAG has a relatively low voltage drop of between 0.7 and 0.9 volts across the collector-emitter terminal. This means that a relatively large number of transistors can be connected in series without significantly affecting the output voltage supplied by the source.
Conclusion
In conclusion, the 2N6426RLRAG is a type of bipolar junction transistor (BJT) that has a relatively high voltage gain, good power dissipation and low operating currents, making it ideal for use in low-power digital circuits, amplifiers and industrial control systems. Its low voltage drop and high current gain make it an ideal choice for switching and current limiting applications.
The specific data is subject to PDF, and the above content is for reference
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