2N6427_D75Z Allicdata Electronics
Allicdata Part #:

2N6427_D75Z-ND

Manufacturer Part#:

2N6427_D75Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 40V 1.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A...
DataSheet: 2N6427_D75Z datasheet2N6427_D75Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N6427
Description

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The 2N6427 is a type of bipolar junction transistor (BJT) that can be classified as a single transistor device. It is a low-power, low-voltage device characterized by its fast switching speed, low leakage current and low power consumption. This makes it extremely useful for applications requiring low-power, high-speed operation. In addition, its two internal base contacts increase the device\'s stability when used in high frequency, high current applications.

The 2N6427 consists of three semiconductor layers: an emitter, a base, and a collector. The emitter, base and collector are typically made of doped silicon semiconductor material. The emitter and collector contacts are made of gold or other metal and are designed to provide a low contact resistance. The base contact is made of an n-type material, which provides insulation between the emitter and collector contacts. The emitter and collector contacts are attached to a single package, making them easier to handle.

The 2N6427 has several areas of application, including analog and digital circuits, digital signal processing, high-speed switching, and motor control. This device is particularly useful for applications where low power consumption, low-voltage operation, and fast switching speeds are required. In addition, due to its low power consumption, the 2N6427 can also be used in battery-powered applications. The 2N6427 also finds use in circuits that require high current gain, such as amplifiers and drivers.

The 2N6427 is commonly used as an amplifier, working off of a single power supply. Its operation is based on current flow from the base to the emitter. When a small base current is applied, a large collector current is produced. This is known as common-emitter configuration, which has a current gain that is usually greater than 100.

The 2N6427 also used in emitter-follower configurations where a large input current is converted into a small output current. This configuration is used in applications such as voltage amplification, current buffering, and signal filtering. Additionally, the 2N6427 is also used as a switch, in which the collector-emitter terminal is used to control the power current flow.

Overall, the 2N6427 is an invaluable device for applications requiring low-power and high-speed operation. It is used in a variety of analog and digital circuits and systems, and offers excellent performance at low voltage, low power consumption and high switching speeds.

The specific data is subject to PDF, and the above content is for reference

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