2N6426 Discrete Semiconductor Products

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The 2N6426 is a NPN silicon epitaxial collector transistor designed for use in amplifying or switching applications. With a Collector-Base breakdown voltage of 300 volts and a power dissipation of 0.5 watts, the 2N6426 can be used in a wide range of applications. Check out more details about this powerful semiconductor device here.

2N6426 Application Field and Working Principle

The 2N6426 is widely used in the automotive, industrial, and telecommunications sectors. It is typically used in audio amplifiers, motor control circuits, DC-DC converters, and relay drivers, as well as other, more specialized applications. It is also used in transistors amplifiers, logic circuits, and digital amplifiers.

The 2N6426’s working principle is based on the BJT transistor model, which describes the internal structure and operation of the 2N6426. The transistor is composed of 3 terminals: the base, collector, and emitter. A small current is applied to the base, which controls the flow of current between the collector and the emitter, effectively amplifying or switching the applied current. The amount of current flowing is thus controlled by the base voltage.

The combination of PN junctions in the 2N6426 creates a region in which majority carriers (electrons) and minority carriers (holes) can move. In the 2N6426, the base-emitter junction is constructed so that the electrons and holes are able to move in two different directions, creating a bipolar current and resulting in amplification of the input current applied to the base. This result is then even further amplified by the collector-base junction, which is built with a doping gradient so that the collector side can draw more electrons and holes than the emitter side.

Therefore, when the base of the 2N6426 is driven to a higher potential than the emitter, the electrons and holes will be attracted to it, resulting in amplification of the input current through the transistor.

The 2N6426 is an excellent choice for electronic applications that require current amplification or switching, due to its high current ratings and excellent performance. Its high voltage, low power consumption, and low noise operation make it an ideal transistor for most applications, providing users with a reliable and inexpensive solution for their projects.

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