Allicdata Part #: | 2N6427_D26Z-ND |
Manufacturer Part#: |
2N6427_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 1.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A... |
DataSheet: | 2N6427_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 14000 @ 500mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6427 |
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2N6427_D26Z Application Field and Working Principle
2N6427_D26Z transistors belong to the Bipolar Junction Transistor (BJT) - Single family. These transistors are mainly used to amplify a weak signal or switch on/off an electric current. They offer different alternatives for their use, depending on the operating conditions and their location. In this article, we will focus on their application field and working principle.
Basic Structure
BJT transistors are three-terminal devices that have three layers of materials with different electric properties. These materials are known as the base, collector and emitter. Each layer has its own characteristics that contribute to the transistor\'s basic behavior.
The base is the layer of material closest to the emitter, and it is made of a lightly doped semiconductor such as an N-type material. The base-to-collector junction is reverse biased, so no current flows through it. The collector is the layer of material farthest from the emitter, and it is made of a moderately doped semiconductor such as a P-type material. The collector-to-base junction is forward biased, making it easier for current to flow through it than to flow through the base-to-collector junction.
The emitter is the layer of material in the middle of the three layers, and it is made of a heavily doped semiconductor such as an N-type material, much like the base is. The emitter-to-base junction is forward biased, encouraging current to flow from the emitter to the base. Together, these three layers form a bipolar junction.
Application Fields
BJT transistors are used in a wide variety of applications, from the small signal amplification used in audio amplifiers and receivers, to power management in computers and other electronic equipment. They can also be used in switching applications, such as in digital circuits. In short, transistors are the basic building blocks of modern electronic systems.
2N6427_D26Z transistors are NPN devices, meaning they utilize the negative bias on the base-collector junction to control the current flow from collector to emitter. This type of device is most commonly used in switching applications, as it can switch relatively large currents on and off. It is also often used in audio amplifiers and similar applications, as it can handle the relatively low power levels of these circuits.
Working Principle
The working principle of a BJT transistor can be explained by examining its basic structure as mentioned above. Positing a current in the form of a voltage at the base terminal of the transistor, causes a current to flow from the collector to the emitter, as a result of the forward biased collector-emitter junction. This current flow is proportional to the size of the base current and the resistances existing between the terminals. This current flow is what is referred to as the collector current. The gain of the transistor is the ratio of the collector current to the base current.
In short, the operation of a transistor is based on the fact that it acts as an amplifier, as the current at the collector terminal is linearly proportional to the current at the base. The size of the current flowing through the collector is determined by the current in the base and the resistance of the tiny space between the collector and emitter. As the voltage applied to the base changes, the current flowing through the transistor changes accordingly. This mechanism allows transistors to act as switches, amplifiers and other electronic components.
Conclusion
2N6427_D26Z transistors are NPN devices that are commonly used in applications ranging from small-signal amplification to switching applications. They can be used in audio equipment, relay controls, power management in computers and similar circuits. A BJT transistor is basically a three-terminal device that has three layers of materials with different electric properties. These layers are known as the base, collector and emitter. The transistor works on the principle that it can amplify or switch an electrical current, based on the changes in the base current, the resistance of the junctions and the voltages applied to the terminals.
The specific data is subject to PDF, and the above content is for reference
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