Allicdata Part #: | 2N6426_D26Z-ND |
Manufacturer Part#: |
2N6426_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 1.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A... |
DataSheet: | 2N6426_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 500mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N6426 |
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2N6426_D26Z is a single bipolar transistor with great applications in high-power electronics. It is an important part of various components such as power transducers, high-power amplifiers and other high-voltage devices. It possesses excellent features that make it suitable for use in a variety of applications. In this article, we will look into the application fields and working principles of the 2N6426_D26Z.
The 2N6426_D26Z is widely used in a range of high-power applications such as power transducers, high-power amplifiers, and other high-voltage devices. The device is characterised by its high voltage and current capability, and by its excellent safety and reliability. The 2N6426_D26Z is also used in circuits requiring high-speed transistor switches, as it is able to switch from off to on in less than a microsecond, and from on to off in as little time. This makes it suitable for use as an integrated circuit in high-frequency applications.
The 2N6426_D26Z has a base-emitter voltage of 80V, and a collector-emitter voltage of 800V. It has a turn-on time of approximately 500ns and a turn-off time of less than 1µs. The device also has a maximum power dissipation of 900mW, a maximum collector-emitter current of 1A and a maximum collector-base current of 100mA.
The 2N6426_D26Z has a simple working principle. When an electric potential is applied between the base and the emitter of the device, a current is induced in the base, which in turn causes the device to become conductive. The current, known as the collector current, flows through the device and is proportional to the electric potential applied to the base. This current is then passed through the collector, and can be used to induce a suitable voltage in an external circuit.
The 2N6426_D26Z is a great device for applications where high power and current handling capabilities are required. It has great features such as its high voltage and current capability, current flows from the base to the collector, and its excellent safety and reliability. The device is also very suitable for use as an integrated circuit, due to its high speed switching capabilities. Therefore, the 2N6426_D26Z makes a great choice for a wide range of high-power electronic devices and applications, and as such deserves its place among the best single bipolar transistors of today.
The specific data is subject to PDF, and the above content is for reference
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