2N6488 Allicdata Electronics

2N6488 Discrete Semiconductor Products

Allicdata Part #:

2N6488CS-ND

Manufacturer Part#:

2N6488

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: THROUGH-HOLE TRANSISTOR-SMALL SI
More Detail: Bipolar (BJT) Transistor NPN 80V 15A 5MHz 75W Thro...
DataSheet: 2N6488 datasheet2N6488 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 75W
Frequency - Transition: 5MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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2N6488 is a type of bipolar junction transistor (BJT), not specifically NPN or PNP. It is a general-purpose transistor manufactured by ON Semiconductor. Designed as a power amplifier, the 2N6488 can be used in a wide range of applications.

The 2N6488 is a popular power amp transistor often used in high-power switching applications, and is made for use in audio and linear amplifiers, relays and solenoid drivers, high power RF amplifiers, and motor drivers. It is capable of handling large currents due to its large SOA (Safe Operating Area). It has a maximum rated voltage of 80V and a maximum current of 25A for a single device. The maximum power dissipation is 200W. Because of its high current capability, the transistor can be used in applications that require greater power than what a standard transistor is capable of handling.

In order to understand how the 2N6488 works, it is important to understand the basics of a bipolar junction transistor. A bipolar junction transistor is a semiconductor device with three terminals, called a base, collector and emitter. It is formed by two p-n junctions, one between the base and collector, and the other between the base and emitter. When the base is forward biased, current will flow from the emitter to the collector. The current flow is controlled by the voltage applied to the base.

The 2N6488 has a maximum collector current of 25A and a maximum base current of 1A. Its Collector Cut-Off Current(ICEO) is specified as 0.1mA, and its maximum DC Collector Current (Ic) is 25A. It has an HFET (High Frequency Transconductance) of 0.9 mA/V. The maximum voltage applied to the collector is 80V and its pulsewidth is 500mS. The maximum current gain is 130.

The 2N6488 can be used in many different applications. It is commonly used as a power amplifier in audio and linear amplifiers, relays and solenoid drivers, high power RF amplifiers, motor drivers, and motor controllers. It is also used for the switching of high current loads. Additionally, it can be used for voltage measurements and for the powering of small DC motors. In addition to these applications, the transistor may also be used for pulse width modulation and for energy storage.

To sum it up, the 2N6488 is a type of bipolar junction transistor (BJT) used for a wide range of applications, such as powering audio and linear amplifiers, relays and solenoid drivers, high power RF amplifiers, motor drivers, and voltage measurements. It has a maximum rated voltage of 80V and a maximum current of 25A. Its maximum power dissipation is 200W. It has an HFET (High Frequency Transconductance) of 0.9 mA/V. The maximum current gain is 130.

The specific data is subject to PDF, and the above content is for reference

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