2N6428ATA Allicdata Electronics
Allicdata Part #:

2N6428ATA-ND

Manufacturer Part#:

2N6428ATA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 200mA 700MHz 625m...
DataSheet: 2N6428ATA datasheet2N6428ATA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 700MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N6428
Description

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2N6428ATA is a kind of single bipolar junction transistors(BJT) designed for general purpose low power amplification and switching application.A BJT consists of three terminals, namely base, collector, and emitter. It is a current-driven device. When a small current flows into the base terminal, a larger current flows from the collector to the emitter. BJT facilitates the current amplification because of its ability to control the current flow in an output circuit with a much smaller current in its input circuit. 2N6428ATA has a common collector configuration and is equipped with a junction gate structure to enable easy mounting while providing ideal electrical characteristics and high stability.The remarkable feature of 2N6428ATA is its low-power dissipation. It is often used in low-power applications to reduce power wastage. It is also compliant with the lead-free soldering requirements.The collector-emitter breakdown rating of 2N6428ATA is 200V, with a base-emitter voltage of 5V. It also operates at a collector current of 0.2A and a maximum power dissipation of 375 mW. It has good common-mode rejection ratio and low leakage current.In terms of application field, 2N6428ATA can be used in low power applications such as switching and control circuits, interfacing and driver circuitry, power stages and amplifiers, and transistor-level digital circuits. As for its working principle, the 2N6428ATA BJT works based on the PNP/NPN transistor principle. In PNP transistors, the majority carriers are holes, while in NPN transistors they are electrons. When the base terminal of a 2N6428ATA BJT is connected to ground, current flows from the collector to the emitter using the holes as carriers. The opposite occurs in NPN transistors where current flows from the emitter to the collector using electrons as carriers. In a BJT, the base-emitter voltage ideally creates a depletion region for the flow of carriers. A current flows into the base terminal, setting up a voltage to the collector terminal, which in turn produces a larger current from the collector to the emitter terminal.In summary, 2N6428ATA is a single bipolar junction transistor designed for general purpose low power amplification and switching. Its working principle is based on the PNP/NPN transistor principle, where current is amplified and shifted between collector, base, and emitter depending on the polarity of the terminals. It has a low-power dissipation, an operating current of 0.2A, and a maximum power dissipation of 375 mW. It can be used in different low power applications and is compliant with lead-free soldering requirements.

The specific data is subject to PDF, and the above content is for reference

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